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Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy.

Lin Z, Bremond G, Bassani F - Nanoscale Res Lett (2011)

Bottom Line: Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient temperature.The DC spectra curve shift direction and distance was observed differently for quantitative measurements.Holes or electrons can be separately injected into these Si-ncs and the capacitance changes caused by these trapped charges can be easily detected by scanning capacitance microscopy/spectroscopy at the nanometer scale.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institut des Nanotechnologies de Lyon, UMR 5270, Institut National des Sciences Appliquées de Lyon, Université de Lyon, Bât, Blaise Pascal, 20, avenue Albert Einstein - 69621 Villeurbanne Cedex, France. zhen.lin@insa-lyon.fr.

ABSTRACT
In this letter, isolated Si nanocrystal has been formed by dewetting process with a thin silicon dioxide layer on top. Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient temperature. The retention time of trapped charges injected by different direct current (DC) bias were evaluated and compared. By ramp process, strong hysteresis window was observed. The DC spectra curve shift direction and distance was observed differently for quantitative measurements. Holes or electrons can be separately injected into these Si-ncs and the capacitance changes caused by these trapped charges can be easily detected by scanning capacitance microscopy/spectroscopy at the nanometer scale. This study is very useful for nanocrystal charge trap memory application.

No MeSH data available.


Related in: MedlinePlus

The formation of isolated Si-ncs.
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Figure 1: The formation of isolated Si-ncs.

Mentions: Figure 1 shows the formation of these isolated Si-ncs. First, a 4-nm-thick thermal oxide was grown as the tunnelling oxide on an amorphous Si substrate. Subsequently, Si layer was deposited by molecular beam epitaxy over a very thin SiO2 layer, 5 nm in thickness, at ambient temperature and was thermally annealed at 750°C for 20 min under ultrahigh vacuum. The dewetting process leads to the formation of isolated Si nanocrystals having an average density of 4 × 1010 cm-2.


Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy.

Lin Z, Bremond G, Bassani F - Nanoscale Res Lett (2011)

The formation of isolated Si-ncs.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211215&req=5

Figure 1: The formation of isolated Si-ncs.
Mentions: Figure 1 shows the formation of these isolated Si-ncs. First, a 4-nm-thick thermal oxide was grown as the tunnelling oxide on an amorphous Si substrate. Subsequently, Si layer was deposited by molecular beam epitaxy over a very thin SiO2 layer, 5 nm in thickness, at ambient temperature and was thermally annealed at 750°C for 20 min under ultrahigh vacuum. The dewetting process leads to the formation of isolated Si nanocrystals having an average density of 4 × 1010 cm-2.

Bottom Line: Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient temperature.The DC spectra curve shift direction and distance was observed differently for quantitative measurements.Holes or electrons can be separately injected into these Si-ncs and the capacitance changes caused by these trapped charges can be easily detected by scanning capacitance microscopy/spectroscopy at the nanometer scale.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institut des Nanotechnologies de Lyon, UMR 5270, Institut National des Sciences Appliquées de Lyon, Université de Lyon, Bât, Blaise Pascal, 20, avenue Albert Einstein - 69621 Villeurbanne Cedex, France. zhen.lin@insa-lyon.fr.

ABSTRACT
In this letter, isolated Si nanocrystal has been formed by dewetting process with a thin silicon dioxide layer on top. Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient temperature. The retention time of trapped charges injected by different direct current (DC) bias were evaluated and compared. By ramp process, strong hysteresis window was observed. The DC spectra curve shift direction and distance was observed differently for quantitative measurements. Holes or electrons can be separately injected into these Si-ncs and the capacitance changes caused by these trapped charges can be easily detected by scanning capacitance microscopy/spectroscopy at the nanometer scale. This study is very useful for nanocrystal charge trap memory application.

No MeSH data available.


Related in: MedlinePlus