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Kinetics of Si and Ge nanowires growth through electron beam evaporation.

Artoni P, Pecora EF, Irrera A, Priolo F - Nanoscale Res Lett (2011)

Bottom Line: Moreover, Si NWs growth requires a higher evaporated fluence before the NWs become to be visible.These differences arise in the different kinetics behaviors of these systems.The authors investigate the microscopic growth mechanisms elucidating the contribution of the adatoms diffusion as a function of the evaporated atoms direct impingement, demonstrating that adatoms play a key role in physical vapor deposition (PVD) NWs growth.

View Article: PubMed Central - HTML - PubMed

Affiliation: MATIS IMM-CNR, Via Santa Sofia 64, I-95123 Catania, Italy. alessia.irrera@ct.infn.it.

ABSTRACT
Si and Ge have the same crystalline structure, and although Si-Au and Ge-Au binary alloys are thermodynamically similar (same phase diagram, with the eutectic temperature of about 360°C), in this study, it is proved that Si and Ge nanowires (NWs) growth by electron beam evaporation occurs in very different temperature ranges and fluence regimes. In particular, it is demonstrated that Ge growth occurs just above the eutectic temperature, while Si NWs growth occurs at temperature higher than the eutectic temperature, at about 450°C. Moreover, Si NWs growth requires a higher evaporated fluence before the NWs become to be visible. These differences arise in the different kinetics behaviors of these systems. The authors investigate the microscopic growth mechanisms elucidating the contribution of the adatoms diffusion as a function of the evaporated atoms direct impingement, demonstrating that adatoms play a key role in physical vapor deposition (PVD) NWs growth. The concept of incubation fluence, which is necessary for an interpretation of NWs growth in PVD growth conditions, is highlighted.

No MeSH data available.


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Increment of the fluence ΔΦ of both the NWs, and the planar rate over the increment of evaporated incident fluence ΔΦinc, as a function of the evaporated fluence Φinc. In particular, in the case of the NW, ΔΦNW has been calculated as the increment of the areal densities of atoms contributing to the NW growth. This ratio represents the axial growth rate of the NW derived with respect to the evaporated fluence.
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Figure 3: Increment of the fluence ΔΦ of both the NWs, and the planar rate over the increment of evaporated incident fluence ΔΦinc, as a function of the evaporated fluence Φinc. In particular, in the case of the NW, ΔΦNW has been calculated as the increment of the areal densities of atoms contributing to the NW growth. This ratio represents the axial growth rate of the NW derived with respect to the evaporated fluence.

Mentions: A comprehensive comparison of the axial growth rate in the case of Si and Ge NWs synthesized by EBE is shown in Figure 3. This figure reports the increment of the fluence ΔΦ of both the NWs and the planar rate over the increment of the evaporated incident fluence (ΔΦinc), as a function of the evaporated fluence Φinc. In particular, in the case of the NW, ΔΦNW has been calculated as the increment of the areal density of atoms contributing to the NWs growth. This ratio represents the axial growth rate of the NW derived with respect to the evaporated fluence.


Kinetics of Si and Ge nanowires growth through electron beam evaporation.

Artoni P, Pecora EF, Irrera A, Priolo F - Nanoscale Res Lett (2011)

Increment of the fluence ΔΦ of both the NWs, and the planar rate over the increment of evaporated incident fluence ΔΦinc, as a function of the evaporated fluence Φinc. In particular, in the case of the NW, ΔΦNW has been calculated as the increment of the areal densities of atoms contributing to the NW growth. This ratio represents the axial growth rate of the NW derived with respect to the evaporated fluence.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211214&req=5

Figure 3: Increment of the fluence ΔΦ of both the NWs, and the planar rate over the increment of evaporated incident fluence ΔΦinc, as a function of the evaporated fluence Φinc. In particular, in the case of the NW, ΔΦNW has been calculated as the increment of the areal densities of atoms contributing to the NW growth. This ratio represents the axial growth rate of the NW derived with respect to the evaporated fluence.
Mentions: A comprehensive comparison of the axial growth rate in the case of Si and Ge NWs synthesized by EBE is shown in Figure 3. This figure reports the increment of the fluence ΔΦ of both the NWs and the planar rate over the increment of the evaporated incident fluence (ΔΦinc), as a function of the evaporated fluence Φinc. In particular, in the case of the NW, ΔΦNW has been calculated as the increment of the areal density of atoms contributing to the NWs growth. This ratio represents the axial growth rate of the NW derived with respect to the evaporated fluence.

Bottom Line: Moreover, Si NWs growth requires a higher evaporated fluence before the NWs become to be visible.These differences arise in the different kinetics behaviors of these systems.The authors investigate the microscopic growth mechanisms elucidating the contribution of the adatoms diffusion as a function of the evaporated atoms direct impingement, demonstrating that adatoms play a key role in physical vapor deposition (PVD) NWs growth.

View Article: PubMed Central - HTML - PubMed

Affiliation: MATIS IMM-CNR, Via Santa Sofia 64, I-95123 Catania, Italy. alessia.irrera@ct.infn.it.

ABSTRACT
Si and Ge have the same crystalline structure, and although Si-Au and Ge-Au binary alloys are thermodynamically similar (same phase diagram, with the eutectic temperature of about 360°C), in this study, it is proved that Si and Ge nanowires (NWs) growth by electron beam evaporation occurs in very different temperature ranges and fluence regimes. In particular, it is demonstrated that Ge growth occurs just above the eutectic temperature, while Si NWs growth occurs at temperature higher than the eutectic temperature, at about 450°C. Moreover, Si NWs growth requires a higher evaporated fluence before the NWs become to be visible. These differences arise in the different kinetics behaviors of these systems. The authors investigate the microscopic growth mechanisms elucidating the contribution of the adatoms diffusion as a function of the evaporated atoms direct impingement, demonstrating that adatoms play a key role in physical vapor deposition (PVD) NWs growth. The concept of incubation fluence, which is necessary for an interpretation of NWs growth in PVD growth conditions, is highlighted.

No MeSH data available.


Related in: MedlinePlus