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Selective patterning of ZnO nanorods on silicon substrates using nanoimprint lithography.

Jung MH, Lee H - Nanoscale Res Lett (2011)

Bottom Line: It was found that the nucleation and initial growth of the crystalline ZnO were proceeded only on the ZnO seed layer, not on the silicon oxide surface.Since the oxygen vacancies on ZnO nanorods serve as strong binding sites for absorption of various organic and inorganic molecules.Consequently, a nano-patterning of the crystalline ZnO nanorods grown from the seed layer treated with plasma may give the versatile applications for the electronics devices.

View Article: PubMed Central - HTML - PubMed

Affiliation: National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440-746, Republic of Korea. hyoyoung@skku.edu.

ABSTRACT
In this research, nanoimprint lithography (NIL) was used for patterning crystalline zinc oxide (ZnO) nanorods on the silicon substrate. To fabricate nano-patterned ZnO nanorods, patterning of an n-octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) on SiO2 substrate was prepared by the polymer mask using NI. The ZnO seed layer was selectively coated only on the hydrophilic SiO2 surface, not on the hydrophobic OTS SAMs surface. The substrate patterned with the ZnO seed layer was treated with the oxygen plasma to oxidize the silicon surface. It was found that the nucleation and initial growth of the crystalline ZnO were proceeded only on the ZnO seed layer, not on the silicon oxide surface. ZnO photoluminescence spectra showed that ZnO nanorods grown from the seed layer treated with plasma showed lower intensity than those untreated with plasma at 378 nm, but higher intensity at 605 nm. It is indicated that the seed layer treated with plasma produced ZnO nanorods that had a more oxygen vacancy than those grown from seed layer untreated with plasma. Since the oxygen vacancies on ZnO nanorods serve as strong binding sites for absorption of various organic and inorganic molecules. Consequently, a nano-patterning of the crystalline ZnO nanorods grown from the seed layer treated with plasma may give the versatile applications for the electronics devices.

No MeSH data available.


Related in: MedlinePlus

ZnO nucleated and grown at the corner or edges of the seed layer. The growth time is (a) 15 min, (b) 30 min, (c) 1 h, and (d) 2 h. The scale bar is 10 μm.
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Figure 7: ZnO nucleated and grown at the corner or edges of the seed layer. The growth time is (a) 15 min, (b) 30 min, (c) 1 h, and (d) 2 h. The scale bar is 10 μm.

Mentions: Since the corners or edges of the patterned structure were often the preferred nucleation sites for material deposition, the catalytic atoms may diffuse preferentially to the corner to form the ZnO nucleus. Figure 7 confirmed that the ZnO pattern was initially a ring pattern and toward the center from an edge or corner of a rectangle, the seed layer was completely filled with the ZnO nanorods within 2 h. The density and morphologies of ZnO nanorods on the seed layer were mainly determined by the solvent, precursor, acidity-basicity of solution, and reaction temperature as well as reaction time [28]. Here, when the size of the seed layer is enough small, only one ZnO nanorod was formed.


Selective patterning of ZnO nanorods on silicon substrates using nanoimprint lithography.

Jung MH, Lee H - Nanoscale Res Lett (2011)

ZnO nucleated and grown at the corner or edges of the seed layer. The growth time is (a) 15 min, (b) 30 min, (c) 1 h, and (d) 2 h. The scale bar is 10 μm.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211210&req=5

Figure 7: ZnO nucleated and grown at the corner or edges of the seed layer. The growth time is (a) 15 min, (b) 30 min, (c) 1 h, and (d) 2 h. The scale bar is 10 μm.
Mentions: Since the corners or edges of the patterned structure were often the preferred nucleation sites for material deposition, the catalytic atoms may diffuse preferentially to the corner to form the ZnO nucleus. Figure 7 confirmed that the ZnO pattern was initially a ring pattern and toward the center from an edge or corner of a rectangle, the seed layer was completely filled with the ZnO nanorods within 2 h. The density and morphologies of ZnO nanorods on the seed layer were mainly determined by the solvent, precursor, acidity-basicity of solution, and reaction temperature as well as reaction time [28]. Here, when the size of the seed layer is enough small, only one ZnO nanorod was formed.

Bottom Line: It was found that the nucleation and initial growth of the crystalline ZnO were proceeded only on the ZnO seed layer, not on the silicon oxide surface.Since the oxygen vacancies on ZnO nanorods serve as strong binding sites for absorption of various organic and inorganic molecules.Consequently, a nano-patterning of the crystalline ZnO nanorods grown from the seed layer treated with plasma may give the versatile applications for the electronics devices.

View Article: PubMed Central - HTML - PubMed

Affiliation: National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440-746, Republic of Korea. hyoyoung@skku.edu.

ABSTRACT
In this research, nanoimprint lithography (NIL) was used for patterning crystalline zinc oxide (ZnO) nanorods on the silicon substrate. To fabricate nano-patterned ZnO nanorods, patterning of an n-octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) on SiO2 substrate was prepared by the polymer mask using NI. The ZnO seed layer was selectively coated only on the hydrophilic SiO2 surface, not on the hydrophobic OTS SAMs surface. The substrate patterned with the ZnO seed layer was treated with the oxygen plasma to oxidize the silicon surface. It was found that the nucleation and initial growth of the crystalline ZnO were proceeded only on the ZnO seed layer, not on the silicon oxide surface. ZnO photoluminescence spectra showed that ZnO nanorods grown from the seed layer treated with plasma showed lower intensity than those untreated with plasma at 378 nm, but higher intensity at 605 nm. It is indicated that the seed layer treated with plasma produced ZnO nanorods that had a more oxygen vacancy than those grown from seed layer untreated with plasma. Since the oxygen vacancies on ZnO nanorods serve as strong binding sites for absorption of various organic and inorganic molecules. Consequently, a nano-patterning of the crystalline ZnO nanorods grown from the seed layer treated with plasma may give the versatile applications for the electronics devices.

No MeSH data available.


Related in: MedlinePlus