Limits...
Selective patterning of ZnO nanorods on silicon substrates using nanoimprint lithography.

Jung MH, Lee H - Nanoscale Res Lett (2011)

Bottom Line: It was found that the nucleation and initial growth of the crystalline ZnO were proceeded only on the ZnO seed layer, not on the silicon oxide surface.Since the oxygen vacancies on ZnO nanorods serve as strong binding sites for absorption of various organic and inorganic molecules.Consequently, a nano-patterning of the crystalline ZnO nanorods grown from the seed layer treated with plasma may give the versatile applications for the electronics devices.

View Article: PubMed Central - HTML - PubMed

Affiliation: National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440-746, Republic of Korea. hyoyoung@skku.edu.

ABSTRACT
In this research, nanoimprint lithography (NIL) was used for patterning crystalline zinc oxide (ZnO) nanorods on the silicon substrate. To fabricate nano-patterned ZnO nanorods, patterning of an n-octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) on SiO2 substrate was prepared by the polymer mask using NI. The ZnO seed layer was selectively coated only on the hydrophilic SiO2 surface, not on the hydrophobic OTS SAMs surface. The substrate patterned with the ZnO seed layer was treated with the oxygen plasma to oxidize the silicon surface. It was found that the nucleation and initial growth of the crystalline ZnO were proceeded only on the ZnO seed layer, not on the silicon oxide surface. ZnO photoluminescence spectra showed that ZnO nanorods grown from the seed layer treated with plasma showed lower intensity than those untreated with plasma at 378 nm, but higher intensity at 605 nm. It is indicated that the seed layer treated with plasma produced ZnO nanorods that had a more oxygen vacancy than those grown from seed layer untreated with plasma. Since the oxygen vacancies on ZnO nanorods serve as strong binding sites for absorption of various organic and inorganic molecules. Consequently, a nano-patterning of the crystalline ZnO nanorods grown from the seed layer treated with plasma may give the versatile applications for the electronics devices.

No MeSH data available.


Related in: MedlinePlus

X-ray diffraction patterns of the as-grown ZnO arrays on the plasma-treated seed layer.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC3211210&req=5

Figure 5: X-ray diffraction patterns of the as-grown ZnO arrays on the plasma-treated seed layer.

Mentions: The crystal structure and vertical alignment of the as-grown ZnO pattern were examined by XRD and rocking curve measurements. The θ-2θ scanning results of the sample were shown in Figure 6. XRD patterns as shown in Figure 5 showed strong peaks at 2θ = 34.393° attributed to the ZnO (002) crystal plane with a Wurtzite structure with lattice parameters a = 3.296 Å and c = 5.207 Å. It exhibited full width at half maximum value of 0.15°, which indicates almost perfect c-axis perpendicular alignment of the ZnO nanorods on the seed layer.


Selective patterning of ZnO nanorods on silicon substrates using nanoimprint lithography.

Jung MH, Lee H - Nanoscale Res Lett (2011)

X-ray diffraction patterns of the as-grown ZnO arrays on the plasma-treated seed layer.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211210&req=5

Figure 5: X-ray diffraction patterns of the as-grown ZnO arrays on the plasma-treated seed layer.
Mentions: The crystal structure and vertical alignment of the as-grown ZnO pattern were examined by XRD and rocking curve measurements. The θ-2θ scanning results of the sample were shown in Figure 6. XRD patterns as shown in Figure 5 showed strong peaks at 2θ = 34.393° attributed to the ZnO (002) crystal plane with a Wurtzite structure with lattice parameters a = 3.296 Å and c = 5.207 Å. It exhibited full width at half maximum value of 0.15°, which indicates almost perfect c-axis perpendicular alignment of the ZnO nanorods on the seed layer.

Bottom Line: It was found that the nucleation and initial growth of the crystalline ZnO were proceeded only on the ZnO seed layer, not on the silicon oxide surface.Since the oxygen vacancies on ZnO nanorods serve as strong binding sites for absorption of various organic and inorganic molecules.Consequently, a nano-patterning of the crystalline ZnO nanorods grown from the seed layer treated with plasma may give the versatile applications for the electronics devices.

View Article: PubMed Central - HTML - PubMed

Affiliation: National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440-746, Republic of Korea. hyoyoung@skku.edu.

ABSTRACT
In this research, nanoimprint lithography (NIL) was used for patterning crystalline zinc oxide (ZnO) nanorods on the silicon substrate. To fabricate nano-patterned ZnO nanorods, patterning of an n-octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) on SiO2 substrate was prepared by the polymer mask using NI. The ZnO seed layer was selectively coated only on the hydrophilic SiO2 surface, not on the hydrophobic OTS SAMs surface. The substrate patterned with the ZnO seed layer was treated with the oxygen plasma to oxidize the silicon surface. It was found that the nucleation and initial growth of the crystalline ZnO were proceeded only on the ZnO seed layer, not on the silicon oxide surface. ZnO photoluminescence spectra showed that ZnO nanorods grown from the seed layer treated with plasma showed lower intensity than those untreated with plasma at 378 nm, but higher intensity at 605 nm. It is indicated that the seed layer treated with plasma produced ZnO nanorods that had a more oxygen vacancy than those grown from seed layer untreated with plasma. Since the oxygen vacancies on ZnO nanorods serve as strong binding sites for absorption of various organic and inorganic molecules. Consequently, a nano-patterning of the crystalline ZnO nanorods grown from the seed layer treated with plasma may give the versatile applications for the electronics devices.

No MeSH data available.


Related in: MedlinePlus