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New Si-based multilayers for solar cell applications.

Nalini RP, Dufour C, Cardin J, Gourbilleau F - Nanoscale Res Lett (2011)

Bottom Line: The comparison between SiO2 and SiNx host matrices in the optical properties of the multilayers is detailed.The effect of specific annealing treatments on the optical properties is studied and we report a higher visible luminescence with a control over the thermal budget when SiO2 is replaced by the SiNx matrix.The latter seems to be a potential candidate to replace the most sought SiO2 host matrix.

View Article: PubMed Central - HTML - PubMed

Affiliation: CIMAP UMR CNRS/CEA/ENSICAEN/UCBN, 6 Bd, Maréchal Juin, 14050 Caen Cedex 4, France. fabrice.gourbilleau@ensicaen.fr.

ABSTRACT
In this article, we have fabricated and studied a new multilayer structure Si-SiO2/SiNx by reactive magnetron sputtering. The comparison between SiO2 and SiNx host matrices in the optical properties of the multilayers is detailed. Structural analysis was made on the multilayer structures using Fourier transform infrared spectroscopy. The effect of specific annealing treatments on the optical properties is studied and we report a higher visible luminescence with a control over the thermal budget when SiO2 is replaced by the SiNx matrix. The latter seems to be a potential candidate to replace the most sought SiO2 host matrix.

No MeSH data available.


Effect of annealing treatment on the PL intensity of the multilayer structures.
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Figure 2: Effect of annealing treatment on the PL intensity of the multilayer structures.

Mentions: The PL emission spectra of the annealed multilayer structures were measured using 488 nm excitation wavelength and the spectrum was recorded in the visible range. Two different annealing treatments were chosen for the study--1 min-1000°C (rapid thermal annealing--RTA) and 1 h-1100°C under N2 atmosphere, the latter being the classical annealing treatment used for recovering defects in SiO2 matrix to favor luminescence from Si-nc [3]. Figure 2 shows the effect of the annealing treatment on the PL intensity of the three kinds of multilayer structures. All the curves are normalized to a total thickness of 100 nm. Since the number of periods and the sublayer thickness remains the same for each of these films, i.e., Nperiods(tsublayer1/tsublayer2) = 50(3.5/3.5 nm), it becomes possible to make a comparative analysis from the PL spectrum of these three different multilayer structures. The interference effect in PL intensity has been investigated by the method proposed by Holm et al. [19] for all the spectra presented in this article. This method gives us the PL intensity versus layer and substrate parameters (refractive indices, thicknesses). We assume and homogenous density of emitting centers, an average refractive index within the thickness of multilayer. For measurements on Figure 2 no important change in PL has been found due to interference.


New Si-based multilayers for solar cell applications.

Nalini RP, Dufour C, Cardin J, Gourbilleau F - Nanoscale Res Lett (2011)

Effect of annealing treatment on the PL intensity of the multilayer structures.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211207&req=5

Figure 2: Effect of annealing treatment on the PL intensity of the multilayer structures.
Mentions: The PL emission spectra of the annealed multilayer structures were measured using 488 nm excitation wavelength and the spectrum was recorded in the visible range. Two different annealing treatments were chosen for the study--1 min-1000°C (rapid thermal annealing--RTA) and 1 h-1100°C under N2 atmosphere, the latter being the classical annealing treatment used for recovering defects in SiO2 matrix to favor luminescence from Si-nc [3]. Figure 2 shows the effect of the annealing treatment on the PL intensity of the three kinds of multilayer structures. All the curves are normalized to a total thickness of 100 nm. Since the number of periods and the sublayer thickness remains the same for each of these films, i.e., Nperiods(tsublayer1/tsublayer2) = 50(3.5/3.5 nm), it becomes possible to make a comparative analysis from the PL spectrum of these three different multilayer structures. The interference effect in PL intensity has been investigated by the method proposed by Holm et al. [19] for all the spectra presented in this article. This method gives us the PL intensity versus layer and substrate parameters (refractive indices, thicknesses). We assume and homogenous density of emitting centers, an average refractive index within the thickness of multilayer. For measurements on Figure 2 no important change in PL has been found due to interference.

Bottom Line: The comparison between SiO2 and SiNx host matrices in the optical properties of the multilayers is detailed.The effect of specific annealing treatments on the optical properties is studied and we report a higher visible luminescence with a control over the thermal budget when SiO2 is replaced by the SiNx matrix.The latter seems to be a potential candidate to replace the most sought SiO2 host matrix.

View Article: PubMed Central - HTML - PubMed

Affiliation: CIMAP UMR CNRS/CEA/ENSICAEN/UCBN, 6 Bd, Maréchal Juin, 14050 Caen Cedex 4, France. fabrice.gourbilleau@ensicaen.fr.

ABSTRACT
In this article, we have fabricated and studied a new multilayer structure Si-SiO2/SiNx by reactive magnetron sputtering. The comparison between SiO2 and SiNx host matrices in the optical properties of the multilayers is detailed. Structural analysis was made on the multilayer structures using Fourier transform infrared spectroscopy. The effect of specific annealing treatments on the optical properties is studied and we report a higher visible luminescence with a control over the thermal budget when SiO2 is replaced by the SiNx matrix. The latter seems to be a potential candidate to replace the most sought SiO2 host matrix.

No MeSH data available.