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Characterization of silicon heterojunctions for solar cells.

Kleider JP, Alvarez J, Ankudinov AV, Gudovskikh AS, Gushchina EV, Labrune M, Maslova OA, Favre W, Gueunier-Farret ME, Roca I Cabarrocas P, Terukov EI - Nanoscale Res Lett (2011)

Bottom Line: This is in good agreement with planar conductance measurements that show a large interface conductance.It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n) a-Si:H/(p) c-Si heterojunctions.These are intimately related to the band offsets, which allows us to determine these parameters with good precision.

View Article: PubMed Central - HTML - PubMed

Affiliation: Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P-Sud, UPMC Univ Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. jean-paul.kleider@lgep.supelec.fr.

ABSTRACT
Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n) a-Si:H/(p) c-Si heterojunctions. These are intimately related to the band offsets, which allows us to determine these parameters with good precision.

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Arrhenius plots of the planar conductance measured on various samples. Red circles for (n) a-Si:H, blue squares for (p) a-Si:H, full symbols for layers deposited on c-Si wafer (on opposite doping type with respect to the deposited a-Si:H layer), open symbols for layers deposited on glass.
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Figure 7: Arrhenius plots of the planar conductance measured on various samples. Red circles for (n) a-Si:H, blue squares for (p) a-Si:H, full symbols for layers deposited on c-Si wafer (on opposite doping type with respect to the deposited a-Si:H layer), open symbols for layers deposited on glass.

Mentions: The existence of an interface conductive channel has also been evidenced by the planar conductance measurements. Indeed, it was shown that the planar conductance was orders of magnitude larger for the samples deposited on c-Si substrates (both n- and p-type) than that measured on the a-Si:H layer deposited in the same run on glass substrates. Activation energy of the conductance for the samples deposited on glass was found equal to about 0.35 and 0.2 eV for the (p) a-Si:H and (n) a-Si:H layers, respectively [8,9]. These are typical values for doped a-Si:H. The conductance for samples deposited on c-Si had much lower activation energy, as can be seen in Figure 7. This high planar conductance measured on the samples deposited on c-Si is in very good agreement with the presence of the conducting channel revealed by our CP-AFM measurements.


Characterization of silicon heterojunctions for solar cells.

Kleider JP, Alvarez J, Ankudinov AV, Gudovskikh AS, Gushchina EV, Labrune M, Maslova OA, Favre W, Gueunier-Farret ME, Roca I Cabarrocas P, Terukov EI - Nanoscale Res Lett (2011)

Arrhenius plots of the planar conductance measured on various samples. Red circles for (n) a-Si:H, blue squares for (p) a-Si:H, full symbols for layers deposited on c-Si wafer (on opposite doping type with respect to the deposited a-Si:H layer), open symbols for layers deposited on glass.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211203&req=5

Figure 7: Arrhenius plots of the planar conductance measured on various samples. Red circles for (n) a-Si:H, blue squares for (p) a-Si:H, full symbols for layers deposited on c-Si wafer (on opposite doping type with respect to the deposited a-Si:H layer), open symbols for layers deposited on glass.
Mentions: The existence of an interface conductive channel has also been evidenced by the planar conductance measurements. Indeed, it was shown that the planar conductance was orders of magnitude larger for the samples deposited on c-Si substrates (both n- and p-type) than that measured on the a-Si:H layer deposited in the same run on glass substrates. Activation energy of the conductance for the samples deposited on glass was found equal to about 0.35 and 0.2 eV for the (p) a-Si:H and (n) a-Si:H layers, respectively [8,9]. These are typical values for doped a-Si:H. The conductance for samples deposited on c-Si had much lower activation energy, as can be seen in Figure 7. This high planar conductance measured on the samples deposited on c-Si is in very good agreement with the presence of the conducting channel revealed by our CP-AFM measurements.

Bottom Line: This is in good agreement with planar conductance measurements that show a large interface conductance.It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n) a-Si:H/(p) c-Si heterojunctions.These are intimately related to the band offsets, which allows us to determine these parameters with good precision.

View Article: PubMed Central - HTML - PubMed

Affiliation: Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P-Sud, UPMC Univ Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. jean-paul.kleider@lgep.supelec.fr.

ABSTRACT
Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n) a-Si:H/(p) c-Si heterojunctions. These are intimately related to the band offsets, which allows us to determine these parameters with good precision.

No MeSH data available.


Related in: MedlinePlus