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Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals.

Klimovskaya A, Sarikov A, Pedchenko Y, Voroshchenko A, Lytvyn O, Stadnik A - Nanoscale Res Lett (2011)

Bottom Line: In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes.The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers.The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

View Article: PubMed Central - HTML - PubMed

Affiliation: 1V, Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauki Avenue, 03028 Kiev, Ukraine. andrey.sarikov@gmx.de.

ABSTRACT
In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes. The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers. The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

No MeSH data available.


Related in: MedlinePlus

AFM images of the surface of 5-nm-thick gold film deposited on Wacker-Chemitronic Si substrates with different thicknesses of grown oxide and subjected to 15 s RTA at 950°C: (a) oxide thickness is 1.8 nm; (b) oxide thickness is 1.9 nm; (c) oxide thickness is 2.0 nm. The maps of heights are shown on the left-hand side; the same maps with distinguished grain boundaries are shown on the right-hand side. For quantitative parameters see Figure 9.
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Figure 8: AFM images of the surface of 5-nm-thick gold film deposited on Wacker-Chemitronic Si substrates with different thicknesses of grown oxide and subjected to 15 s RTA at 950°C: (a) oxide thickness is 1.8 nm; (b) oxide thickness is 1.9 nm; (c) oxide thickness is 2.0 nm. The maps of heights are shown on the left-hand side; the same maps with distinguished grain boundaries are shown on the right-hand side. For quantitative parameters see Figure 9.

Mentions: The thickness of oxide layer on the surface of Si wafer had a great effect on the formation of gold nanoisland arrays during the RTA treatments (Figures 8 and 9). One can see that the gold films formed islands more efficiently on the artificial oxide coverage at the RTA temperature of 950°C than on the native oxide coverage. A gradual increase in the oxide thickness promoted the increase in the free space between the grains, in contrast to the closely packed grains on the substrates covered with native oxide. At the same time, the size distribution of grains and its maximum practically did not change with the oxide thickness (Figure 9).


Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals.

Klimovskaya A, Sarikov A, Pedchenko Y, Voroshchenko A, Lytvyn O, Stadnik A - Nanoscale Res Lett (2011)

AFM images of the surface of 5-nm-thick gold film deposited on Wacker-Chemitronic Si substrates with different thicknesses of grown oxide and subjected to 15 s RTA at 950°C: (a) oxide thickness is 1.8 nm; (b) oxide thickness is 1.9 nm; (c) oxide thickness is 2.0 nm. The maps of heights are shown on the left-hand side; the same maps with distinguished grain boundaries are shown on the right-hand side. For quantitative parameters see Figure 9.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211202&req=5

Figure 8: AFM images of the surface of 5-nm-thick gold film deposited on Wacker-Chemitronic Si substrates with different thicknesses of grown oxide and subjected to 15 s RTA at 950°C: (a) oxide thickness is 1.8 nm; (b) oxide thickness is 1.9 nm; (c) oxide thickness is 2.0 nm. The maps of heights are shown on the left-hand side; the same maps with distinguished grain boundaries are shown on the right-hand side. For quantitative parameters see Figure 9.
Mentions: The thickness of oxide layer on the surface of Si wafer had a great effect on the formation of gold nanoisland arrays during the RTA treatments (Figures 8 and 9). One can see that the gold films formed islands more efficiently on the artificial oxide coverage at the RTA temperature of 950°C than on the native oxide coverage. A gradual increase in the oxide thickness promoted the increase in the free space between the grains, in contrast to the closely packed grains on the substrates covered with native oxide. At the same time, the size distribution of grains and its maximum practically did not change with the oxide thickness (Figure 9).

Bottom Line: In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes.The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers.The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

View Article: PubMed Central - HTML - PubMed

Affiliation: 1V, Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauki Avenue, 03028 Kiev, Ukraine. andrey.sarikov@gmx.de.

ABSTRACT
In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes. The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers. The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

No MeSH data available.


Related in: MedlinePlus