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Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals.

Klimovskaya A, Sarikov A, Pedchenko Y, Voroshchenko A, Lytvyn O, Stadnik A - Nanoscale Res Lett (2011)

Bottom Line: In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes.The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers.The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

View Article: PubMed Central - HTML - PubMed

Affiliation: 1V, Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauki Avenue, 03028 Kiev, Ukraine. andrey.sarikov@gmx.de.

ABSTRACT
In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes. The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers. The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

No MeSH data available.


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Dependence of oxygen and gold contents in the subsurface layers of Au/Si structures on the RTA temperature.
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Figure 7: Dependence of oxygen and gold contents in the subsurface layers of Au/Si structures on the RTA temperature.

Mentions: It is worthy to note that the gold evaporation from the Si substrate surface was the accompanying process to the formation of gold island arrays during the high temperature anneals. Figure 7 shows the contents of oxygen and gold in the subsurface layers of Au/Si structures after 15-s RTA treatments at different temperatures for the Wacker-Chemitronic Si wafers. The contents of both gold and oxygen were determined from the results of X-ray energy-dispersive analysis of the scanning electron microscope, Zeiss Evo-50. The integration was carried out over the area of 10 × 10 μm2 with a collection time of 150 s. As can be noted from the data presented, a sharp decrease (by about 1/3) of gold contents in the structures under investigation took place after the threshold temperature of about 800°C. Besides, a nonlinear increase in the oxygen contents in the subsurface layers was observed with the increase of RTA temperature (by a factor of 4 for the temperature range of 300-1050°C). This effect can be due to the presence of oxygen traces in the atmosphere of experimental setup and possible diffusion of oxygen from the substrate bulk to the hetero-boundary in the course of annealing.


Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals.

Klimovskaya A, Sarikov A, Pedchenko Y, Voroshchenko A, Lytvyn O, Stadnik A - Nanoscale Res Lett (2011)

Dependence of oxygen and gold contents in the subsurface layers of Au/Si structures on the RTA temperature.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211202&req=5

Figure 7: Dependence of oxygen and gold contents in the subsurface layers of Au/Si structures on the RTA temperature.
Mentions: It is worthy to note that the gold evaporation from the Si substrate surface was the accompanying process to the formation of gold island arrays during the high temperature anneals. Figure 7 shows the contents of oxygen and gold in the subsurface layers of Au/Si structures after 15-s RTA treatments at different temperatures for the Wacker-Chemitronic Si wafers. The contents of both gold and oxygen were determined from the results of X-ray energy-dispersive analysis of the scanning electron microscope, Zeiss Evo-50. The integration was carried out over the area of 10 × 10 μm2 with a collection time of 150 s. As can be noted from the data presented, a sharp decrease (by about 1/3) of gold contents in the structures under investigation took place after the threshold temperature of about 800°C. Besides, a nonlinear increase in the oxygen contents in the subsurface layers was observed with the increase of RTA temperature (by a factor of 4 for the temperature range of 300-1050°C). This effect can be due to the presence of oxygen traces in the atmosphere of experimental setup and possible diffusion of oxygen from the substrate bulk to the hetero-boundary in the course of annealing.

Bottom Line: In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes.The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers.The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

View Article: PubMed Central - HTML - PubMed

Affiliation: 1V, Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauki Avenue, 03028 Kiev, Ukraine. andrey.sarikov@gmx.de.

ABSTRACT
In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes. The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers. The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

No MeSH data available.


Related in: MedlinePlus