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Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals.

Klimovskaya A, Sarikov A, Pedchenko Y, Voroshchenko A, Lytvyn O, Stadnik A - Nanoscale Res Lett (2011)

Bottom Line: In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes.The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers.The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

View Article: PubMed Central - HTML - PubMed

Affiliation: 1V, Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauki Avenue, 03028 Kiev, Ukraine. andrey.sarikov@gmx.de.

ABSTRACT
In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes. The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers. The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

No MeSH data available.


Related in: MedlinePlus

Histograms of the diameter distributions of gold droplets (left) and the same histograms weighted on droplet volumes (right) (ordinate axis shows the total droplet volume) corresponding to the structures shown in Figure 5. Droplet density amounts to 2460, 2520, 1940, and 264 μm-2, respectively, for (a-d).
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Figure 6: Histograms of the diameter distributions of gold droplets (left) and the same histograms weighted on droplet volumes (right) (ordinate axis shows the total droplet volume) corresponding to the structures shown in Figure 5. Droplet density amounts to 2460, 2520, 1940, and 264 μm-2, respectively, for (a-d).

Mentions: Fast anneals at high temperatures of the structures of Si substrates with gold films deposited on them both in furnace and RTA equipment result in the disjoining of gold films and the formation of the arrays of separated gold islands. This process is strongly dependent on the quality of the surface of Si wafers. The results on gold island formation by RTA on the Si wafers procured from Silicon Ltd., and Wacker-Chemitronic are presented in Figures 3, 4, and 5, 6, respectively. It can be seen that the formation of separated gold islands on the Silicon Ltd. wafers (high surface roughness, RMS = 1.83 nm) begins already at 900°C (Figure 3). For the Wacker-Chemitronic Si wafers (RMS = 0.25 nm), the formation of individual gold islands is not observed at any rate up to the temperature of 950°C (see Figure 5). Instead, the individual intergrain boundaries often form joints 120°j for the mentioned temperatures, indicating a steady-state gold film recrystallisation process.


Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals.

Klimovskaya A, Sarikov A, Pedchenko Y, Voroshchenko A, Lytvyn O, Stadnik A - Nanoscale Res Lett (2011)

Histograms of the diameter distributions of gold droplets (left) and the same histograms weighted on droplet volumes (right) (ordinate axis shows the total droplet volume) corresponding to the structures shown in Figure 5. Droplet density amounts to 2460, 2520, 1940, and 264 μm-2, respectively, for (a-d).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211202&req=5

Figure 6: Histograms of the diameter distributions of gold droplets (left) and the same histograms weighted on droplet volumes (right) (ordinate axis shows the total droplet volume) corresponding to the structures shown in Figure 5. Droplet density amounts to 2460, 2520, 1940, and 264 μm-2, respectively, for (a-d).
Mentions: Fast anneals at high temperatures of the structures of Si substrates with gold films deposited on them both in furnace and RTA equipment result in the disjoining of gold films and the formation of the arrays of separated gold islands. This process is strongly dependent on the quality of the surface of Si wafers. The results on gold island formation by RTA on the Si wafers procured from Silicon Ltd., and Wacker-Chemitronic are presented in Figures 3, 4, and 5, 6, respectively. It can be seen that the formation of separated gold islands on the Silicon Ltd. wafers (high surface roughness, RMS = 1.83 nm) begins already at 900°C (Figure 3). For the Wacker-Chemitronic Si wafers (RMS = 0.25 nm), the formation of individual gold islands is not observed at any rate up to the temperature of 950°C (see Figure 5). Instead, the individual intergrain boundaries often form joints 120°j for the mentioned temperatures, indicating a steady-state gold film recrystallisation process.

Bottom Line: In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes.The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers.The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

View Article: PubMed Central - HTML - PubMed

Affiliation: 1V, Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauki Avenue, 03028 Kiev, Ukraine. andrey.sarikov@gmx.de.

ABSTRACT
In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes. The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers. The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

No MeSH data available.


Related in: MedlinePlus