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Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals.

Klimovskaya A, Sarikov A, Pedchenko Y, Voroshchenko A, Lytvyn O, Stadnik A - Nanoscale Res Lett (2011)

Bottom Line: In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes.The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers.The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

View Article: PubMed Central - HTML - PubMed

Affiliation: 1V, Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauki Avenue, 03028 Kiev, Ukraine. andrey.sarikov@gmx.de.

ABSTRACT
In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes. The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers. The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

No MeSH data available.


Related in: MedlinePlus

AFM images of the surfaces of 3-nmthick gold films deposited onto the Wacker-Chemitronic Si substrates with the natural oxide layer after 15 s RTA: (a) 400°C; (b) 700°C; (c) 950°C; and (d) 1050°C. The maps of heights are shown on the left hand side; the same maps with distinguished grain boundaries are shown on the right hand side. For quantitative parameters see Figure 6.
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Figure 5: AFM images of the surfaces of 3-nmthick gold films deposited onto the Wacker-Chemitronic Si substrates with the natural oxide layer after 15 s RTA: (a) 400°C; (b) 700°C; (c) 950°C; and (d) 1050°C. The maps of heights are shown on the left hand side; the same maps with distinguished grain boundaries are shown on the right hand side. For quantitative parameters see Figure 6.

Mentions: Fast anneals at high temperatures of the structures of Si substrates with gold films deposited on them both in furnace and RTA equipment result in the disjoining of gold films and the formation of the arrays of separated gold islands. This process is strongly dependent on the quality of the surface of Si wafers. The results on gold island formation by RTA on the Si wafers procured from Silicon Ltd., and Wacker-Chemitronic are presented in Figures 3, 4, and 5, 6, respectively. It can be seen that the formation of separated gold islands on the Silicon Ltd. wafers (high surface roughness, RMS = 1.83 nm) begins already at 900°C (Figure 3). For the Wacker-Chemitronic Si wafers (RMS = 0.25 nm), the formation of individual gold islands is not observed at any rate up to the temperature of 950°C (see Figure 5). Instead, the individual intergrain boundaries often form joints 120°j for the mentioned temperatures, indicating a steady-state gold film recrystallisation process.


Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals.

Klimovskaya A, Sarikov A, Pedchenko Y, Voroshchenko A, Lytvyn O, Stadnik A - Nanoscale Res Lett (2011)

AFM images of the surfaces of 3-nmthick gold films deposited onto the Wacker-Chemitronic Si substrates with the natural oxide layer after 15 s RTA: (a) 400°C; (b) 700°C; (c) 950°C; and (d) 1050°C. The maps of heights are shown on the left hand side; the same maps with distinguished grain boundaries are shown on the right hand side. For quantitative parameters see Figure 6.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211202&req=5

Figure 5: AFM images of the surfaces of 3-nmthick gold films deposited onto the Wacker-Chemitronic Si substrates with the natural oxide layer after 15 s RTA: (a) 400°C; (b) 700°C; (c) 950°C; and (d) 1050°C. The maps of heights are shown on the left hand side; the same maps with distinguished grain boundaries are shown on the right hand side. For quantitative parameters see Figure 6.
Mentions: Fast anneals at high temperatures of the structures of Si substrates with gold films deposited on them both in furnace and RTA equipment result in the disjoining of gold films and the formation of the arrays of separated gold islands. This process is strongly dependent on the quality of the surface of Si wafers. The results on gold island formation by RTA on the Si wafers procured from Silicon Ltd., and Wacker-Chemitronic are presented in Figures 3, 4, and 5, 6, respectively. It can be seen that the formation of separated gold islands on the Silicon Ltd. wafers (high surface roughness, RMS = 1.83 nm) begins already at 900°C (Figure 3). For the Wacker-Chemitronic Si wafers (RMS = 0.25 nm), the formation of individual gold islands is not observed at any rate up to the temperature of 950°C (see Figure 5). Instead, the individual intergrain boundaries often form joints 120°j for the mentioned temperatures, indicating a steady-state gold film recrystallisation process.

Bottom Line: In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes.The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers.The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

View Article: PubMed Central - HTML - PubMed

Affiliation: 1V, Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauki Avenue, 03028 Kiev, Ukraine. andrey.sarikov@gmx.de.

ABSTRACT
In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes. The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers. The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

No MeSH data available.


Related in: MedlinePlus