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Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals.

Klimovskaya A, Sarikov A, Pedchenko Y, Voroshchenko A, Lytvyn O, Stadnik A - Nanoscale Res Lett (2011)

Bottom Line: In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes.The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers.The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

View Article: PubMed Central - HTML - PubMed

Affiliation: 1V, Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauki Avenue, 03028 Kiev, Ukraine. andrey.sarikov@gmx.de.

ABSTRACT
In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes. The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers. The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

No MeSH data available.


Related in: MedlinePlus

Histograms of the distributions of the characteristics of gold films presented in Figure 1: grain diameters (a-c) and the surface profiles (d). For a good layout, the distribution (a) is superimposed on distributions (b,c).
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Figure 2: Histograms of the distributions of the characteristics of gold films presented in Figure 1: grain diameters (a-c) and the surface profiles (d). For a good layout, the distribution (a) is superimposed on distributions (b,c).

Mentions: The development of the structure of gold films deposited onto the Si substrates takes place already during the stage of film deposition. Gold films acquire different nanocrystalline structures depending on the state of the oxide on the Si wafer. The AFM images of gold films deposited on the Si surfaces with different states of oxide coverage are shown in Figure 1. The size distributions of the crystallites formed are shown in Figure 2. As can be seen from these figures, the gold films formed crystallites with a typical size of 12 nm on substrates with native oxide after cleaning in neutral solution (Figure 2a). The nanocrystal sizes increased with the increase of annealing temperature for RTA-treated Si wafers (to 15 and 18 nm for RTA at 650 and 950°C, respectively, see Figure 2b,c). Such behaviour was mainly caused by the increase in surface homogeneity of native silicon oxide coverage that is supported by the surface profiles shown in Figure 2d. The gold films grown on initial Si surfaces had the most developed surfaces (RMS = 0.6 nm). RTA treatments led to the decrease of this value down to 0.4 nm. The histograms in Figure 2a,b,c demonstrate additionally the increase in the mean diameter of gold crystallites as a result of the increase of RTA temperature and the decrease of gold film roughness. It follows therefore that through modifying the oxide coverage on the surface of Si substrates, one can control the deposited gold film structure and subsequently, the process of the formation of catalytically active nanoislands for the growth of Si wire-like crystals.


Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals.

Klimovskaya A, Sarikov A, Pedchenko Y, Voroshchenko A, Lytvyn O, Stadnik A - Nanoscale Res Lett (2011)

Histograms of the distributions of the characteristics of gold films presented in Figure 1: grain diameters (a-c) and the surface profiles (d). For a good layout, the distribution (a) is superimposed on distributions (b,c).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211202&req=5

Figure 2: Histograms of the distributions of the characteristics of gold films presented in Figure 1: grain diameters (a-c) and the surface profiles (d). For a good layout, the distribution (a) is superimposed on distributions (b,c).
Mentions: The development of the structure of gold films deposited onto the Si substrates takes place already during the stage of film deposition. Gold films acquire different nanocrystalline structures depending on the state of the oxide on the Si wafer. The AFM images of gold films deposited on the Si surfaces with different states of oxide coverage are shown in Figure 1. The size distributions of the crystallites formed are shown in Figure 2. As can be seen from these figures, the gold films formed crystallites with a typical size of 12 nm on substrates with native oxide after cleaning in neutral solution (Figure 2a). The nanocrystal sizes increased with the increase of annealing temperature for RTA-treated Si wafers (to 15 and 18 nm for RTA at 650 and 950°C, respectively, see Figure 2b,c). Such behaviour was mainly caused by the increase in surface homogeneity of native silicon oxide coverage that is supported by the surface profiles shown in Figure 2d. The gold films grown on initial Si surfaces had the most developed surfaces (RMS = 0.6 nm). RTA treatments led to the decrease of this value down to 0.4 nm. The histograms in Figure 2a,b,c demonstrate additionally the increase in the mean diameter of gold crystallites as a result of the increase of RTA temperature and the decrease of gold film roughness. It follows therefore that through modifying the oxide coverage on the surface of Si substrates, one can control the deposited gold film structure and subsequently, the process of the formation of catalytically active nanoislands for the growth of Si wire-like crystals.

Bottom Line: In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes.The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers.The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

View Article: PubMed Central - HTML - PubMed

Affiliation: 1V, Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauki Avenue, 03028 Kiev, Ukraine. andrey.sarikov@gmx.de.

ABSTRACT
In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes. The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers. The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.

No MeSH data available.


Related in: MedlinePlus