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Properties of silicon dioxide layers with embedded metal nanocrystals produced by oxidation of Si:Me mixture.

Novikau A, Gaiduk P, Maksimova K, Zenkevich A - Nanoscale Res Lett (2011)

Bottom Line: A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing.It is found that Me segregation induced by Si:Me mixture oxidation results in the formation of a high density of Me and silicide nanocrystals in thin film SiO2 matrix.Strong evidence of oxidation temperature as well as impurity type effect on the charge storage in crystalline Me-nanodot layer is demonstrated by the hysteresis behavior of the high-frequency C-V curves.

View Article: PubMed Central - HTML - PubMed

Affiliation: Belarusian State University, 4 prosp, Nezavisimosti, 220030, Minsk, Belarus. andrei.novikau.by@gmail.com.

ABSTRACT
A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing. The kinetics of the film oxidation and the structural properties of the prepared samples were investigated by Rutherford backscattering spectrometry, and transmission electron microscopy, respectively. The electrical properties of the selected SiO2:Me nanocomposite films were evaluated by measuring C-V and I-V characteristics on a metal-oxide-semiconductor stack. It is found that Me segregation induced by Si:Me mixture oxidation results in the formation of a high density of Me and silicide nanocrystals in thin film SiO2 matrix. Strong evidence of oxidation temperature as well as impurity type effect on the charge storage in crystalline Me-nanodot layer is demonstrated by the hysteresis behavior of the high-frequency C-V curves.

No MeSH data available.


Related in: MedlinePlus

Leakage current vs. gate voltage characteristics obtained from the oxidized Si:Au and Si:Pt samples at T = 640°C. The I-V curve from the reference sample of pure SiO2 is shown for comparison.
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Figure 5: Leakage current vs. gate voltage characteristics obtained from the oxidized Si:Au and Si:Pt samples at T = 640°C. The I-V curve from the reference sample of pure SiO2 is shown for comparison.

Mentions: One of the major reasons for the loss of charge in the floating gate structures is the leakage current. The measured I-V curves (Figure 5) from Si:Au and Si:Pt samples oxidized in dry ambient reveal that the leakage current density can be reduced down to 10-8 A/cm2. The low leakage currents achieved are explained by the high quality of both tunneling and capping oxide formed by dry thermal process compared with the deposited oxides used in the alternative methods of MOS capacitor formation [15]. It is found that the oxidation temperature has also a strong effect on the leakage current, and therefore the oxidation conditions should be optimized for each type of embedded metal NCs.


Properties of silicon dioxide layers with embedded metal nanocrystals produced by oxidation of Si:Me mixture.

Novikau A, Gaiduk P, Maksimova K, Zenkevich A - Nanoscale Res Lett (2011)

Leakage current vs. gate voltage characteristics obtained from the oxidized Si:Au and Si:Pt samples at T = 640°C. The I-V curve from the reference sample of pure SiO2 is shown for comparison.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211198&req=5

Figure 5: Leakage current vs. gate voltage characteristics obtained from the oxidized Si:Au and Si:Pt samples at T = 640°C. The I-V curve from the reference sample of pure SiO2 is shown for comparison.
Mentions: One of the major reasons for the loss of charge in the floating gate structures is the leakage current. The measured I-V curves (Figure 5) from Si:Au and Si:Pt samples oxidized in dry ambient reveal that the leakage current density can be reduced down to 10-8 A/cm2. The low leakage currents achieved are explained by the high quality of both tunneling and capping oxide formed by dry thermal process compared with the deposited oxides used in the alternative methods of MOS capacitor formation [15]. It is found that the oxidation temperature has also a strong effect on the leakage current, and therefore the oxidation conditions should be optimized for each type of embedded metal NCs.

Bottom Line: A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing.It is found that Me segregation induced by Si:Me mixture oxidation results in the formation of a high density of Me and silicide nanocrystals in thin film SiO2 matrix.Strong evidence of oxidation temperature as well as impurity type effect on the charge storage in crystalline Me-nanodot layer is demonstrated by the hysteresis behavior of the high-frequency C-V curves.

View Article: PubMed Central - HTML - PubMed

Affiliation: Belarusian State University, 4 prosp, Nezavisimosti, 220030, Minsk, Belarus. andrei.novikau.by@gmail.com.

ABSTRACT
A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing. The kinetics of the film oxidation and the structural properties of the prepared samples were investigated by Rutherford backscattering spectrometry, and transmission electron microscopy, respectively. The electrical properties of the selected SiO2:Me nanocomposite films were evaluated by measuring C-V and I-V characteristics on a metal-oxide-semiconductor stack. It is found that Me segregation induced by Si:Me mixture oxidation results in the formation of a high density of Me and silicide nanocrystals in thin film SiO2 matrix. Strong evidence of oxidation temperature as well as impurity type effect on the charge storage in crystalline Me-nanodot layer is demonstrated by the hysteresis behavior of the high-frequency C-V curves.

No MeSH data available.


Related in: MedlinePlus