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Properties of silicon dioxide layers with embedded metal nanocrystals produced by oxidation of Si:Me mixture.

Novikau A, Gaiduk P, Maksimova K, Zenkevich A - Nanoscale Res Lett (2011)

Bottom Line: A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing.It is found that Me segregation induced by Si:Me mixture oxidation results in the formation of a high density of Me and silicide nanocrystals in thin film SiO2 matrix.Strong evidence of oxidation temperature as well as impurity type effect on the charge storage in crystalline Me-nanodot layer is demonstrated by the hysteresis behavior of the high-frequency C-V curves.

View Article: PubMed Central - HTML - PubMed

Affiliation: Belarusian State University, 4 prosp, Nezavisimosti, 220030, Minsk, Belarus. andrei.novikau.by@gmail.com.

ABSTRACT
A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing. The kinetics of the film oxidation and the structural properties of the prepared samples were investigated by Rutherford backscattering spectrometry, and transmission electron microscopy, respectively. The electrical properties of the selected SiO2:Me nanocomposite films were evaluated by measuring C-V and I-V characteristics on a metal-oxide-semiconductor stack. It is found that Me segregation induced by Si:Me mixture oxidation results in the formation of a high density of Me and silicide nanocrystals in thin film SiO2 matrix. Strong evidence of oxidation temperature as well as impurity type effect on the charge storage in crystalline Me-nanodot layer is demonstrated by the hysteresis behavior of the high-frequency C-V curves.

No MeSH data available.


High-frequency C-V curves measured from Si:Au and Si:Pt samples, oxidized at T = 640°C for 5 and 9 h in dry O2, respectively. A gate voltage sweep from inversion to accumulation and from accumulation to inversion is shown on the figure by arrows.
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Figure 4: High-frequency C-V curves measured from Si:Au and Si:Pt samples, oxidized at T = 640°C for 5 and 9 h in dry O2, respectively. A gate voltage sweep from inversion to accumulation and from accumulation to inversion is shown on the figure by arrows.

Mentions: The effect of the oxidation temperature as well as the type of the embedded Me on the efficiency of the charge storage was studied by the high-frequency C-V measurements. The hysteresis in C-V curves was found different for the structures containing Au and PtSi NCs (Figure 4). The maximal value of the flat-band voltage shift U = 1.8 V for the Vg sweep -5/+3 V was obtained for SiO2:NC-Au based structures prepared by dry oxidation. On the contrary, in the case of SiO2:NC-PtSi, the maximal flat-band voltage shift was U = 1.2 V. By increasing Vg sweep up to 5 V, a gradual increase of the flat-band voltage shift was achieved. Since high positive gate voltages shift C-V curves in the direction of the stored negative charges, it is concluded that the charge trapping occurs through the electron injection from the substrate into the oxide. No flat-band voltage shift was observed for the reference sample prepared with pure SiO2, oxidized at T = 850°C for 60 min in O2 ambient. It is therefore concluded that the effect of charge storage is related to the NCs.


Properties of silicon dioxide layers with embedded metal nanocrystals produced by oxidation of Si:Me mixture.

Novikau A, Gaiduk P, Maksimova K, Zenkevich A - Nanoscale Res Lett (2011)

High-frequency C-V curves measured from Si:Au and Si:Pt samples, oxidized at T = 640°C for 5 and 9 h in dry O2, respectively. A gate voltage sweep from inversion to accumulation and from accumulation to inversion is shown on the figure by arrows.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211198&req=5

Figure 4: High-frequency C-V curves measured from Si:Au and Si:Pt samples, oxidized at T = 640°C for 5 and 9 h in dry O2, respectively. A gate voltage sweep from inversion to accumulation and from accumulation to inversion is shown on the figure by arrows.
Mentions: The effect of the oxidation temperature as well as the type of the embedded Me on the efficiency of the charge storage was studied by the high-frequency C-V measurements. The hysteresis in C-V curves was found different for the structures containing Au and PtSi NCs (Figure 4). The maximal value of the flat-band voltage shift U = 1.8 V for the Vg sweep -5/+3 V was obtained for SiO2:NC-Au based structures prepared by dry oxidation. On the contrary, in the case of SiO2:NC-PtSi, the maximal flat-band voltage shift was U = 1.2 V. By increasing Vg sweep up to 5 V, a gradual increase of the flat-band voltage shift was achieved. Since high positive gate voltages shift C-V curves in the direction of the stored negative charges, it is concluded that the charge trapping occurs through the electron injection from the substrate into the oxide. No flat-band voltage shift was observed for the reference sample prepared with pure SiO2, oxidized at T = 850°C for 60 min in O2 ambient. It is therefore concluded that the effect of charge storage is related to the NCs.

Bottom Line: A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing.It is found that Me segregation induced by Si:Me mixture oxidation results in the formation of a high density of Me and silicide nanocrystals in thin film SiO2 matrix.Strong evidence of oxidation temperature as well as impurity type effect on the charge storage in crystalline Me-nanodot layer is demonstrated by the hysteresis behavior of the high-frequency C-V curves.

View Article: PubMed Central - HTML - PubMed

Affiliation: Belarusian State University, 4 prosp, Nezavisimosti, 220030, Minsk, Belarus. andrei.novikau.by@gmail.com.

ABSTRACT
A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing. The kinetics of the film oxidation and the structural properties of the prepared samples were investigated by Rutherford backscattering spectrometry, and transmission electron microscopy, respectively. The electrical properties of the selected SiO2:Me nanocomposite films were evaluated by measuring C-V and I-V characteristics on a metal-oxide-semiconductor stack. It is found that Me segregation induced by Si:Me mixture oxidation results in the formation of a high density of Me and silicide nanocrystals in thin film SiO2 matrix. Strong evidence of oxidation temperature as well as impurity type effect on the charge storage in crystalline Me-nanodot layer is demonstrated by the hysteresis behavior of the high-frequency C-V curves.

No MeSH data available.