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Properties of silicon dioxide layers with embedded metal nanocrystals produced by oxidation of Si:Me mixture.

Novikau A, Gaiduk P, Maksimova K, Zenkevich A - Nanoscale Res Lett (2011)

Bottom Line: A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing.It is found that Me segregation induced by Si:Me mixture oxidation results in the formation of a high density of Me and silicide nanocrystals in thin film SiO2 matrix.Strong evidence of oxidation temperature as well as impurity type effect on the charge storage in crystalline Me-nanodot layer is demonstrated by the hysteresis behavior of the high-frequency C-V curves.

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Affiliation: Belarusian State University, 4 prosp, Nezavisimosti, 220030, Minsk, Belarus. andrei.novikau.by@gmail.com.

ABSTRACT
A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing. The kinetics of the film oxidation and the structural properties of the prepared samples were investigated by Rutherford backscattering spectrometry, and transmission electron microscopy, respectively. The electrical properties of the selected SiO2:Me nanocomposite films were evaluated by measuring C-V and I-V characteristics on a metal-oxide-semiconductor stack. It is found that Me segregation induced by Si:Me mixture oxidation results in the formation of a high density of Me and silicide nanocrystals in thin film SiO2 matrix. Strong evidence of oxidation temperature as well as impurity type effect on the charge storage in crystalline Me-nanodot layer is demonstrated by the hysteresis behavior of the high-frequency C-V curves.

No MeSH data available.


RBS spectra from as grown and thermally oxidized Si:Me/SiO2/Si samples: (a) RBS spectra (E = 1.5 MeV, θ = 75°) from Si:Pt/SiO2/Si samples thermally oxidized at T = 725°C for 60 min in O2 followed by thermal annealing in N2 at T = 900°C for 30 s. as compared with as-grown structure; (b) Au peak in RBS spectra evidences strong Au segregation during Si oxidation process at different temperatures.
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Figure 2: RBS spectra from as grown and thermally oxidized Si:Me/SiO2/Si samples: (a) RBS spectra (E = 1.5 MeV, θ = 75°) from Si:Pt/SiO2/Si samples thermally oxidized at T = 725°C for 60 min in O2 followed by thermal annealing in N2 at T = 900°C for 30 s. as compared with as-grown structure; (b) Au peak in RBS spectra evidences strong Au segregation during Si oxidation process at different temperatures.

Mentions: The typical RBS spectra from the as-grown and thermally treated Si:Me/SiO2/Si samples are presented in Figure 2. The RBS spectra show that the thickness of as-deposited Si:Au layers is about 20 nm. The metal concentration in the deposited layers is in the range 2.5-4.5%. The shift of both Au and Pt peaks to the lower energies upon thermal oxidation evidencing the pile up of metal atoms at the SiO2/Si interface is clearly observed in RBS spectra. The observed evolution of Pt and Au concentration profiles indicates the complete rejection of Me atoms from the oxide during thermal oxidation of a-Si:Me layer. The detailed analysis of RBS data (Figure 2) reveals that Au and Pt segregation depends on the oxidation conditions. In particular, neither evaporation nor diffusion of Au or Pt in SiO2 layer takes place during thermal oxidation in dry O2. On the contrary, oxidation at higher temperatures results in a strong loss (about 30%) of Me from the SiO2 layer, apparently due to evaporation and partial diffusion into the Si substrate.


Properties of silicon dioxide layers with embedded metal nanocrystals produced by oxidation of Si:Me mixture.

Novikau A, Gaiduk P, Maksimova K, Zenkevich A - Nanoscale Res Lett (2011)

RBS spectra from as grown and thermally oxidized Si:Me/SiO2/Si samples: (a) RBS spectra (E = 1.5 MeV, θ = 75°) from Si:Pt/SiO2/Si samples thermally oxidized at T = 725°C for 60 min in O2 followed by thermal annealing in N2 at T = 900°C for 30 s. as compared with as-grown structure; (b) Au peak in RBS spectra evidences strong Au segregation during Si oxidation process at different temperatures.
© Copyright Policy - open-access
Related In: Results  -  Collection

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getmorefigures.php?uid=PMC3211198&req=5

Figure 2: RBS spectra from as grown and thermally oxidized Si:Me/SiO2/Si samples: (a) RBS spectra (E = 1.5 MeV, θ = 75°) from Si:Pt/SiO2/Si samples thermally oxidized at T = 725°C for 60 min in O2 followed by thermal annealing in N2 at T = 900°C for 30 s. as compared with as-grown structure; (b) Au peak in RBS spectra evidences strong Au segregation during Si oxidation process at different temperatures.
Mentions: The typical RBS spectra from the as-grown and thermally treated Si:Me/SiO2/Si samples are presented in Figure 2. The RBS spectra show that the thickness of as-deposited Si:Au layers is about 20 nm. The metal concentration in the deposited layers is in the range 2.5-4.5%. The shift of both Au and Pt peaks to the lower energies upon thermal oxidation evidencing the pile up of metal atoms at the SiO2/Si interface is clearly observed in RBS spectra. The observed evolution of Pt and Au concentration profiles indicates the complete rejection of Me atoms from the oxide during thermal oxidation of a-Si:Me layer. The detailed analysis of RBS data (Figure 2) reveals that Au and Pt segregation depends on the oxidation conditions. In particular, neither evaporation nor diffusion of Au or Pt in SiO2 layer takes place during thermal oxidation in dry O2. On the contrary, oxidation at higher temperatures results in a strong loss (about 30%) of Me from the SiO2 layer, apparently due to evaporation and partial diffusion into the Si substrate.

Bottom Line: A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing.It is found that Me segregation induced by Si:Me mixture oxidation results in the formation of a high density of Me and silicide nanocrystals in thin film SiO2 matrix.Strong evidence of oxidation temperature as well as impurity type effect on the charge storage in crystalline Me-nanodot layer is demonstrated by the hysteresis behavior of the high-frequency C-V curves.

View Article: PubMed Central - HTML - PubMed

Affiliation: Belarusian State University, 4 prosp, Nezavisimosti, 220030, Minsk, Belarus. andrei.novikau.by@gmail.com.

ABSTRACT
A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing. The kinetics of the film oxidation and the structural properties of the prepared samples were investigated by Rutherford backscattering spectrometry, and transmission electron microscopy, respectively. The electrical properties of the selected SiO2:Me nanocomposite films were evaluated by measuring C-V and I-V characteristics on a metal-oxide-semiconductor stack. It is found that Me segregation induced by Si:Me mixture oxidation results in the formation of a high density of Me and silicide nanocrystals in thin film SiO2 matrix. Strong evidence of oxidation temperature as well as impurity type effect on the charge storage in crystalline Me-nanodot layer is demonstrated by the hysteresis behavior of the high-frequency C-V curves.

No MeSH data available.