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Impact of AFM-induced nano-pits in a-Si:H films on silicon crystal growth.

Verveniotis E, Rezek B, Sípek E, Stuchlík J, Ledinský M, Kočka J - Nanoscale Res Lett (2011)

Bottom Line: In this article, the authors show that such local modifications can be used to selectively induce further localized growth of silicon nanocrystals.First, a-Si:H films by plasma-enhanced chemical vapor deposition on nickel/glass substrates are prepared.This is also supported by micro-Raman spectroscopy.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Physics ASCR, Cukrovarnicka 10, 16253, Prague 6, Czech Republic. verven@fzu.cz.

ABSTRACT
Conductive tips in atomic force microscopy (AFM) can be used to localize field-enhanced metal-induced solid-phase crystallization (FE-MISPC) of amorphous silicon (a-Si:H) at room temperature down to nanoscale dimensions. In this article, the authors show that such local modifications can be used to selectively induce further localized growth of silicon nanocrystals. First, a-Si:H films by plasma-enhanced chemical vapor deposition on nickel/glass substrates are prepared. After the FE-MISPC process, yielding both conductive and non-conductive nano-pits in the films, the second silicon layer at the boundary condition of amorphous and microcrystalline growth is deposited. Comparing AFM morphology and current-sensing AFM data on the first and second layers, it is observed that the second deposition changes the morphology and increases the local conductivity of FE-MISPC-induced pits by up to an order of magnitude irrespective of their prior conductivity. This is attributed to the silicon nanocrystals (<100 nm) that tend to nucleate and grow inside the pits. This is also supported by micro-Raman spectroscopy.

No MeSH data available.


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Three-dimensional AFM topography of the middle pit in Figure 2: (a) after FE-MISPC process, (b) after the second silicon deposition.
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Figure 3: Three-dimensional AFM topography of the middle pit in Figure 2: (a) after FE-MISPC process, (b) after the second silicon deposition.

Mentions: Topography of the same spot after second deposition (see Figure 2b) shows several small silicon nano-crystals scattered across the area. The depth of the pits increased to 50-60 nm as shown by the spatial profile in Figure 2d. FWHM is 180 nm (middle pit). In the CS-AFM image after the second deposition (see Figure 2f), it can be seen that the previously non-conductive pits now exhibit pronounced difference in conductance. Corresponding current spatial profile in Figure 3h shows a peak current up to 65 pA at -25 V. FWHM is 40 nm (middle pit).


Impact of AFM-induced nano-pits in a-Si:H films on silicon crystal growth.

Verveniotis E, Rezek B, Sípek E, Stuchlík J, Ledinský M, Kočka J - Nanoscale Res Lett (2011)

Three-dimensional AFM topography of the middle pit in Figure 2: (a) after FE-MISPC process, (b) after the second silicon deposition.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211195&req=5

Figure 3: Three-dimensional AFM topography of the middle pit in Figure 2: (a) after FE-MISPC process, (b) after the second silicon deposition.
Mentions: Topography of the same spot after second deposition (see Figure 2b) shows several small silicon nano-crystals scattered across the area. The depth of the pits increased to 50-60 nm as shown by the spatial profile in Figure 2d. FWHM is 180 nm (middle pit). In the CS-AFM image after the second deposition (see Figure 2f), it can be seen that the previously non-conductive pits now exhibit pronounced difference in conductance. Corresponding current spatial profile in Figure 3h shows a peak current up to 65 pA at -25 V. FWHM is 40 nm (middle pit).

Bottom Line: In this article, the authors show that such local modifications can be used to selectively induce further localized growth of silicon nanocrystals.First, a-Si:H films by plasma-enhanced chemical vapor deposition on nickel/glass substrates are prepared.This is also supported by micro-Raman spectroscopy.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Physics ASCR, Cukrovarnicka 10, 16253, Prague 6, Czech Republic. verven@fzu.cz.

ABSTRACT
Conductive tips in atomic force microscopy (AFM) can be used to localize field-enhanced metal-induced solid-phase crystallization (FE-MISPC) of amorphous silicon (a-Si:H) at room temperature down to nanoscale dimensions. In this article, the authors show that such local modifications can be used to selectively induce further localized growth of silicon nanocrystals. First, a-Si:H films by plasma-enhanced chemical vapor deposition on nickel/glass substrates are prepared. After the FE-MISPC process, yielding both conductive and non-conductive nano-pits in the films, the second silicon layer at the boundary condition of amorphous and microcrystalline growth is deposited. Comparing AFM morphology and current-sensing AFM data on the first and second layers, it is observed that the second deposition changes the morphology and increases the local conductivity of FE-MISPC-induced pits by up to an order of magnitude irrespective of their prior conductivity. This is attributed to the silicon nanocrystals (<100 nm) that tend to nucleate and grow inside the pits. This is also supported by micro-Raman spectroscopy.

No MeSH data available.


Related in: MedlinePlus