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Impact of AFM-induced nano-pits in a-Si:H films on silicon crystal growth.

Verveniotis E, Rezek B, Sípek E, Stuchlík J, Ledinský M, Kočka J - Nanoscale Res Lett (2011)

Bottom Line: In this article, the authors show that such local modifications can be used to selectively induce further localized growth of silicon nanocrystals.First, a-Si:H films by plasma-enhanced chemical vapor deposition on nickel/glass substrates are prepared.This is also supported by micro-Raman spectroscopy.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Physics ASCR, Cukrovarnicka 10, 16253, Prague 6, Czech Republic. verven@fzu.cz.

ABSTRACT
Conductive tips in atomic force microscopy (AFM) can be used to localize field-enhanced metal-induced solid-phase crystallization (FE-MISPC) of amorphous silicon (a-Si:H) at room temperature down to nanoscale dimensions. In this article, the authors show that such local modifications can be used to selectively induce further localized growth of silicon nanocrystals. First, a-Si:H films by plasma-enhanced chemical vapor deposition on nickel/glass substrates are prepared. After the FE-MISPC process, yielding both conductive and non-conductive nano-pits in the films, the second silicon layer at the boundary condition of amorphous and microcrystalline growth is deposited. Comparing AFM morphology and current-sensing AFM data on the first and second layers, it is observed that the second deposition changes the morphology and increases the local conductivity of FE-MISPC-induced pits by up to an order of magnitude irrespective of their prior conductivity. This is attributed to the silicon nanocrystals (<100 nm) that tend to nucleate and grow inside the pits. This is also supported by micro-Raman spectroscopy.

No MeSH data available.


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Local topography images after. (a) the FE-MISPC process and (c) the second deposition of the same spot. Their cross sections are plotted in (b, d), respectively. (e, g) CS-AFM images corresponding to (a) and (c), respectively. Their cross sections are plotted in (f, h), respectively. Positions of the cross sections are indicated by arrows next to the images.
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Figure 1: Local topography images after. (a) the FE-MISPC process and (c) the second deposition of the same spot. Their cross sections are plotted in (b, d), respectively. (e, g) CS-AFM images corresponding to (a) and (c), respectively. Their cross sections are plotted in (f, h), respectively. Positions of the cross sections are indicated by arrows next to the images.

Mentions: Figure 1a shows the typical local topography after an FE-MISPC experiment exhibiting current spikes over the set-point [12]. The diameter of the pit is 300 nm, and it can be seen that some material is accumulated around the hole. The cross section plotted in Figure 1b shows that the depth of the pit is 100 nm. The full-width-at-half-maximum (FWHM) is 200 nm. In Figure 1e is shown the local conductivity map of the same area obtained at the sample bias voltage of -25 V. The conductive region is mainly focused in the pit. The cross section plotted in Figure 1f shows the spatial profile of electrical current inside the pit. Peak current is 100 pA, and FWHM is 60 nm.


Impact of AFM-induced nano-pits in a-Si:H films on silicon crystal growth.

Verveniotis E, Rezek B, Sípek E, Stuchlík J, Ledinský M, Kočka J - Nanoscale Res Lett (2011)

Local topography images after. (a) the FE-MISPC process and (c) the second deposition of the same spot. Their cross sections are plotted in (b, d), respectively. (e, g) CS-AFM images corresponding to (a) and (c), respectively. Their cross sections are plotted in (f, h), respectively. Positions of the cross sections are indicated by arrows next to the images.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211195&req=5

Figure 1: Local topography images after. (a) the FE-MISPC process and (c) the second deposition of the same spot. Their cross sections are plotted in (b, d), respectively. (e, g) CS-AFM images corresponding to (a) and (c), respectively. Their cross sections are plotted in (f, h), respectively. Positions of the cross sections are indicated by arrows next to the images.
Mentions: Figure 1a shows the typical local topography after an FE-MISPC experiment exhibiting current spikes over the set-point [12]. The diameter of the pit is 300 nm, and it can be seen that some material is accumulated around the hole. The cross section plotted in Figure 1b shows that the depth of the pit is 100 nm. The full-width-at-half-maximum (FWHM) is 200 nm. In Figure 1e is shown the local conductivity map of the same area obtained at the sample bias voltage of -25 V. The conductive region is mainly focused in the pit. The cross section plotted in Figure 1f shows the spatial profile of electrical current inside the pit. Peak current is 100 pA, and FWHM is 60 nm.

Bottom Line: In this article, the authors show that such local modifications can be used to selectively induce further localized growth of silicon nanocrystals.First, a-Si:H films by plasma-enhanced chemical vapor deposition on nickel/glass substrates are prepared.This is also supported by micro-Raman spectroscopy.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Physics ASCR, Cukrovarnicka 10, 16253, Prague 6, Czech Republic. verven@fzu.cz.

ABSTRACT
Conductive tips in atomic force microscopy (AFM) can be used to localize field-enhanced metal-induced solid-phase crystallization (FE-MISPC) of amorphous silicon (a-Si:H) at room temperature down to nanoscale dimensions. In this article, the authors show that such local modifications can be used to selectively induce further localized growth of silicon nanocrystals. First, a-Si:H films by plasma-enhanced chemical vapor deposition on nickel/glass substrates are prepared. After the FE-MISPC process, yielding both conductive and non-conductive nano-pits in the films, the second silicon layer at the boundary condition of amorphous and microcrystalline growth is deposited. Comparing AFM morphology and current-sensing AFM data on the first and second layers, it is observed that the second deposition changes the morphology and increases the local conductivity of FE-MISPC-induced pits by up to an order of magnitude irrespective of their prior conductivity. This is attributed to the silicon nanocrystals (<100 nm) that tend to nucleate and grow inside the pits. This is also supported by micro-Raman spectroscopy.

No MeSH data available.


Related in: MedlinePlus