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Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates.

Camara N, Jouault B, Jabakhanji B, Caboni A, Tiberj A, Consejo C, Godignon P, Camassel J - Nanoscale Res Lett (2011)

Bottom Line: Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements.On the best samples, we find a moderate p-type doping, a high-carrier mobility and resolve the half-integer quantum Hall effect typical of high-quality graphene samples.A rough estimation of the density of states is given from temperature measurements.

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Affiliation: Laboratoire Charles Coulomb, UMR 5221 CNRS-UM2, Place Eugène Bataillon, 34095 Montpellier Cedex 5, France. jouault@ges.univ-montp2.fr.

ABSTRACT
Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8° off-axis 4H-SiC samples, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. On the best samples, we find a moderate p-type doping, a high-carrier mobility and resolve the half-integer quantum Hall effect typical of high-quality graphene samples. A rough estimation of the density of states is given from temperature measurements.

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Longitudinal resistance (in ohms) as a function of the injected current. Breakdown of the quantization occurs at I = 0.5 μA.
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Figure 7: Longitudinal resistance (in ohms) as a function of the injected current. Breakdown of the quantization occurs at I = 0.5 μA.

Mentions: Finally, since EG has recently been proposed for metrological application, we plot, in Figure 7, the longitudinal resistance as a function of the current at B = 13.5 T. This magnetic field is far from the filling factor υ = 2 and; therefore, the breakdown occurs at relatively low current: I = 0.5 μA, which corresponds to a current density j = 0.025 A/m. By comparison, for III-V heterostructures, critical current values of 1 A/m are reported.


Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates.

Camara N, Jouault B, Jabakhanji B, Caboni A, Tiberj A, Consejo C, Godignon P, Camassel J - Nanoscale Res Lett (2011)

Longitudinal resistance (in ohms) as a function of the injected current. Breakdown of the quantization occurs at I = 0.5 μA.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211189&req=5

Figure 7: Longitudinal resistance (in ohms) as a function of the injected current. Breakdown of the quantization occurs at I = 0.5 μA.
Mentions: Finally, since EG has recently been proposed for metrological application, we plot, in Figure 7, the longitudinal resistance as a function of the current at B = 13.5 T. This magnetic field is far from the filling factor υ = 2 and; therefore, the breakdown occurs at relatively low current: I = 0.5 μA, which corresponds to a current density j = 0.025 A/m. By comparison, for III-V heterostructures, critical current values of 1 A/m are reported.

Bottom Line: Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements.On the best samples, we find a moderate p-type doping, a high-carrier mobility and resolve the half-integer quantum Hall effect typical of high-quality graphene samples.A rough estimation of the density of states is given from temperature measurements.

View Article: PubMed Central - HTML - PubMed

Affiliation: Laboratoire Charles Coulomb, UMR 5221 CNRS-UM2, Place Eugène Bataillon, 34095 Montpellier Cedex 5, France. jouault@ges.univ-montp2.fr.

ABSTRACT
Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8° off-axis 4H-SiC samples, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. On the best samples, we find a moderate p-type doping, a high-carrier mobility and resolve the half-integer quantum Hall effect typical of high-quality graphene samples. A rough estimation of the density of states is given from temperature measurements.

No MeSH data available.


Related in: MedlinePlus