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Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates.

Camara N, Jouault B, Jabakhanji B, Caboni A, Tiberj A, Consejo C, Godignon P, Camassel J - Nanoscale Res Lett (2011)

Bottom Line: Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements.On the best samples, we find a moderate p-type doping, a high-carrier mobility and resolve the half-integer quantum Hall effect typical of high-quality graphene samples.A rough estimation of the density of states is given from temperature measurements.

View Article: PubMed Central - HTML - PubMed

Affiliation: Laboratoire Charles Coulomb, UMR 5221 CNRS-UM2, Place Eugène Bataillon, 34095 Montpellier Cedex 5, France. jouault@ges.univ-montp2.fr.

ABSTRACT
Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8° off-axis 4H-SiC samples, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. On the best samples, we find a moderate p-type doping, a high-carrier mobility and resolve the half-integer quantum Hall effect typical of high-quality graphene samples. A rough estimation of the density of states is given from temperature measurements.

No MeSH data available.


Related in: MedlinePlus

Optical microscopy of a SLEG grown on 8° off-axis semi-insulating SiC substrate. (a) before contact and (b) after contacting in a Hall Bar configuration for Hall Effect measurement.
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Figure 3: Optical microscopy of a SLEG grown on 8° off-axis semi-insulating SiC substrate. (a) before contact and (b) after contacting in a Hall Bar configuration for Hall Effect measurement.

Mentions: Gold alignment marks were used to select some SLEG position by OM. Then, they were contacted by e-beam lithography and subsequent deposition of a contact layer made of Cr/Au in Hall bar configuration. A typical example is shown in Figure 3.


Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates.

Camara N, Jouault B, Jabakhanji B, Caboni A, Tiberj A, Consejo C, Godignon P, Camassel J - Nanoscale Res Lett (2011)

Optical microscopy of a SLEG grown on 8° off-axis semi-insulating SiC substrate. (a) before contact and (b) after contacting in a Hall Bar configuration for Hall Effect measurement.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211189&req=5

Figure 3: Optical microscopy of a SLEG grown on 8° off-axis semi-insulating SiC substrate. (a) before contact and (b) after contacting in a Hall Bar configuration for Hall Effect measurement.
Mentions: Gold alignment marks were used to select some SLEG position by OM. Then, they were contacted by e-beam lithography and subsequent deposition of a contact layer made of Cr/Au in Hall bar configuration. A typical example is shown in Figure 3.

Bottom Line: Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements.On the best samples, we find a moderate p-type doping, a high-carrier mobility and resolve the half-integer quantum Hall effect typical of high-quality graphene samples.A rough estimation of the density of states is given from temperature measurements.

View Article: PubMed Central - HTML - PubMed

Affiliation: Laboratoire Charles Coulomb, UMR 5221 CNRS-UM2, Place Eugène Bataillon, 34095 Montpellier Cedex 5, France. jouault@ges.univ-montp2.fr.

ABSTRACT
Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8° off-axis 4H-SiC samples, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. On the best samples, we find a moderate p-type doping, a high-carrier mobility and resolve the half-integer quantum Hall effect typical of high-quality graphene samples. A rough estimation of the density of states is given from temperature measurements.

No MeSH data available.


Related in: MedlinePlus