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Scanning tip measurement for identification of point defects.

Dózsa L, Molnár G, Raineri V, Giannazzo F, Ferencz J, Lányi S - Nanoscale Res Lett (2011)

Bottom Line: In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth.These defects deteriorated the Schottky junction characteristic.Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface.

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Affiliation: Research Institute for Technical Physics and Materials Sciences, P,O, 49, H-1525 Budapest, Hungary. dozsa@mfa.kfki.hu.

ABSTRACT
Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS) were used to measure the electrical properties of Au/silicon Schottky junctions. Spreading resistance and scanning probe capacitance microscopy (SCM) were applied to measure local electrical properties. Using a preamplifier the sensitivity of DLTS was increased satisfactorily to measure transients of the scanning tip semiconductor junction. In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth. These defects deteriorated the Schottky junction characteristic. Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface. The defect transients in this area were measured both in macroscopic Schottky junctions and by scanning tip DLTS and were detected by bias modulation frequency dependence in SCM.

No MeSH data available.


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Electrical characteristics measured by the capacitance preamplifier with a 100 nm radius tip positioned near the silicon surface. a. C-V characteristics. b. DLTS frequency scan.
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Figure 4: Electrical characteristics measured by the capacitance preamplifier with a 100 nm radius tip positioned near the silicon surface. a. C-V characteristics. b. DLTS frequency scan.

Mentions: The measured scanning tip C-V characteristic outside the Fe deposition is shown in Figure 4a. The scanning tip DLTS frequency scan spectrum measured in the same position is shown in Figure 4b. The spectra were measured at room temperature. The spectra measured in different position on the surface show a scatter in amplitude and peak position. This property is analogous to the large scatter observed by SCM outside the Fe deposition area, and the scatter of the DLTS spectra measured in different position Schottky junctions.


Scanning tip measurement for identification of point defects.

Dózsa L, Molnár G, Raineri V, Giannazzo F, Ferencz J, Lányi S - Nanoscale Res Lett (2011)

Electrical characteristics measured by the capacitance preamplifier with a 100 nm radius tip positioned near the silicon surface. a. C-V characteristics. b. DLTS frequency scan.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211188&req=5

Figure 4: Electrical characteristics measured by the capacitance preamplifier with a 100 nm radius tip positioned near the silicon surface. a. C-V characteristics. b. DLTS frequency scan.
Mentions: The measured scanning tip C-V characteristic outside the Fe deposition is shown in Figure 4a. The scanning tip DLTS frequency scan spectrum measured in the same position is shown in Figure 4b. The spectra were measured at room temperature. The spectra measured in different position on the surface show a scatter in amplitude and peak position. This property is analogous to the large scatter observed by SCM outside the Fe deposition area, and the scatter of the DLTS spectra measured in different position Schottky junctions.

Bottom Line: In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth.These defects deteriorated the Schottky junction characteristic.Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface.

View Article: PubMed Central - HTML - PubMed

Affiliation: Research Institute for Technical Physics and Materials Sciences, P,O, 49, H-1525 Budapest, Hungary. dozsa@mfa.kfki.hu.

ABSTRACT
Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS) were used to measure the electrical properties of Au/silicon Schottky junctions. Spreading resistance and scanning probe capacitance microscopy (SCM) were applied to measure local electrical properties. Using a preamplifier the sensitivity of DLTS was increased satisfactorily to measure transients of the scanning tip semiconductor junction. In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth. These defects deteriorated the Schottky junction characteristic. Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface. The defect transients in this area were measured both in macroscopic Schottky junctions and by scanning tip DLTS and were detected by bias modulation frequency dependence in SCM.

No MeSH data available.


Related in: MedlinePlus