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Scanning tip measurement for identification of point defects.

Dózsa L, Molnár G, Raineri V, Giannazzo F, Ferencz J, Lányi S - Nanoscale Res Lett (2011)

Bottom Line: In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth.These defects deteriorated the Schottky junction characteristic.Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface.

View Article: PubMed Central - HTML - PubMed

Affiliation: Research Institute for Technical Physics and Materials Sciences, P,O, 49, H-1525 Budapest, Hungary. dozsa@mfa.kfki.hu.

ABSTRACT
Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS) were used to measure the electrical properties of Au/silicon Schottky junctions. Spreading resistance and scanning probe capacitance microscopy (SCM) were applied to measure local electrical properties. Using a preamplifier the sensitivity of DLTS was increased satisfactorily to measure transients of the scanning tip semiconductor junction. In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth. These defects deteriorated the Schottky junction characteristic. Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface. The defect transients in this area were measured both in macroscopic Schottky junctions and by scanning tip DLTS and were detected by bias modulation frequency dependence in SCM.

No MeSH data available.


Related in: MedlinePlus

DLTS results in macroscopic Schottky junctions. a. DLTS frequency scan spectra measured by DLS-83D system. b. Depth profile of the defect. c. Arrhenius plot for determination of the activation energy of the defect.
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Figure 3: DLTS results in macroscopic Schottky junctions. a. DLTS frequency scan spectra measured by DLS-83D system. b. Depth profile of the defect. c. Arrhenius plot for determination of the activation energy of the defect.

Mentions: DLTS spectra measured in a Schottky junction outside the Fe deposition area are shown in Figure 3a. The spectra were recorded at -5 V reverse bias and 0 V bias, 5 μs filling pulses. The spectra are broad, indicating that the defect activation energy is distributed. The depth profile measured by DLTS is shown in Figure 3b. The defects are localized at about 200 nm from the silicon surface. The activation energy of the defect determined by Arrhenius plot shown in Figure 3c agrees with a defect attributed to Fe in silicon [12]. We remark that the depth profile of the defect may be also interpreted as a distributed energy surface state in 5 × 1010/cm2 density, since the depth resolution of the capacitance DLTS technique is not satisfactory to distinguish these details.


Scanning tip measurement for identification of point defects.

Dózsa L, Molnár G, Raineri V, Giannazzo F, Ferencz J, Lányi S - Nanoscale Res Lett (2011)

DLTS results in macroscopic Schottky junctions. a. DLTS frequency scan spectra measured by DLS-83D system. b. Depth profile of the defect. c. Arrhenius plot for determination of the activation energy of the defect.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211188&req=5

Figure 3: DLTS results in macroscopic Schottky junctions. a. DLTS frequency scan spectra measured by DLS-83D system. b. Depth profile of the defect. c. Arrhenius plot for determination of the activation energy of the defect.
Mentions: DLTS spectra measured in a Schottky junction outside the Fe deposition area are shown in Figure 3a. The spectra were recorded at -5 V reverse bias and 0 V bias, 5 μs filling pulses. The spectra are broad, indicating that the defect activation energy is distributed. The depth profile measured by DLTS is shown in Figure 3b. The defects are localized at about 200 nm from the silicon surface. The activation energy of the defect determined by Arrhenius plot shown in Figure 3c agrees with a defect attributed to Fe in silicon [12]. We remark that the depth profile of the defect may be also interpreted as a distributed energy surface state in 5 × 1010/cm2 density, since the depth resolution of the capacitance DLTS technique is not satisfactory to distinguish these details.

Bottom Line: In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth.These defects deteriorated the Schottky junction characteristic.Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface.

View Article: PubMed Central - HTML - PubMed

Affiliation: Research Institute for Technical Physics and Materials Sciences, P,O, 49, H-1525 Budapest, Hungary. dozsa@mfa.kfki.hu.

ABSTRACT
Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS) were used to measure the electrical properties of Au/silicon Schottky junctions. Spreading resistance and scanning probe capacitance microscopy (SCM) were applied to measure local electrical properties. Using a preamplifier the sensitivity of DLTS was increased satisfactorily to measure transients of the scanning tip semiconductor junction. In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth. These defects deteriorated the Schottky junction characteristic. Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface. The defect transients in this area were measured both in macroscopic Schottky junctions and by scanning tip DLTS and were detected by bias modulation frequency dependence in SCM.

No MeSH data available.


Related in: MedlinePlus