Limits...
Scanning tip measurement for identification of point defects.

Dózsa L, Molnár G, Raineri V, Giannazzo F, Ferencz J, Lányi S - Nanoscale Res Lett (2011)

Bottom Line: In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth.These defects deteriorated the Schottky junction characteristic.Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface.

View Article: PubMed Central - HTML - PubMed

Affiliation: Research Institute for Technical Physics and Materials Sciences, P,O, 49, H-1525 Budapest, Hungary. dozsa@mfa.kfki.hu.

ABSTRACT
Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS) were used to measure the electrical properties of Au/silicon Schottky junctions. Spreading resistance and scanning probe capacitance microscopy (SCM) were applied to measure local electrical properties. Using a preamplifier the sensitivity of DLTS was increased satisfactorily to measure transients of the scanning tip semiconductor junction. In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth. These defects deteriorated the Schottky junction characteristic. Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface. The defect transients in this area were measured both in macroscopic Schottky junctions and by scanning tip DLTS and were detected by bias modulation frequency dependence in SCM.

No MeSH data available.


Related in: MedlinePlus

C-V characteristics of Schottky junction prepared in the Fe-deposited area (Fe) and on the silicon surface (Si).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC3211188&req=5

Figure 1: C-V characteristics of Schottky junction prepared in the Fe-deposited area (Fe) and on the silicon surface (Si).

Mentions: The C-V characteristics of a Schottky junction prepared on the Fe-deposited area and on the free silicon are shown in Figure 1. The capacitance of the Schottky junction on the Fe-deposited area is larger, indicating that the Fe-generated defect concentration in this area in about 0.5 μm depth is few time 1016/cm3. This defect concentration is an order of magnitude larger than the 2 × 1015/cm3 doping determined from the 1/C2-V plot measured in junctions prepared on the silicon surface. These defects are donor type deep level defects, situated about 250-300 meV below the conduction band edge.


Scanning tip measurement for identification of point defects.

Dózsa L, Molnár G, Raineri V, Giannazzo F, Ferencz J, Lányi S - Nanoscale Res Lett (2011)

C-V characteristics of Schottky junction prepared in the Fe-deposited area (Fe) and on the silicon surface (Si).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211188&req=5

Figure 1: C-V characteristics of Schottky junction prepared in the Fe-deposited area (Fe) and on the silicon surface (Si).
Mentions: The C-V characteristics of a Schottky junction prepared on the Fe-deposited area and on the free silicon are shown in Figure 1. The capacitance of the Schottky junction on the Fe-deposited area is larger, indicating that the Fe-generated defect concentration in this area in about 0.5 μm depth is few time 1016/cm3. This defect concentration is an order of magnitude larger than the 2 × 1015/cm3 doping determined from the 1/C2-V plot measured in junctions prepared on the silicon surface. These defects are donor type deep level defects, situated about 250-300 meV below the conduction band edge.

Bottom Line: In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth.These defects deteriorated the Schottky junction characteristic.Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface.

View Article: PubMed Central - HTML - PubMed

Affiliation: Research Institute for Technical Physics and Materials Sciences, P,O, 49, H-1525 Budapest, Hungary. dozsa@mfa.kfki.hu.

ABSTRACT
Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS) were used to measure the electrical properties of Au/silicon Schottky junctions. Spreading resistance and scanning probe capacitance microscopy (SCM) were applied to measure local electrical properties. Using a preamplifier the sensitivity of DLTS was increased satisfactorily to measure transients of the scanning tip semiconductor junction. In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth. These defects deteriorated the Schottky junction characteristic. Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface. The defect transients in this area were measured both in macroscopic Schottky junctions and by scanning tip DLTS and were detected by bias modulation frequency dependence in SCM.

No MeSH data available.


Related in: MedlinePlus