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On the direct insulator-quantum Hall transition in two-dimensional electron systems in the vicinity of nanoscaled scatterers.

Liang CT, Lin LH, Kuang Yoa C, Lo ST, Wang YT, Lou DS, Kim GH, Yuan-Huei C, Ochiai Y, Aoki N, Chen JC, Lin Y, Chun-Feng H, Lin SD, Ritchie DA - Nanoscale Res Lett (2011)

Bottom Line: Such a transition has been attracting a great deal of both experimental and theoretical interests.In this study, we present three different two-dimensional electron systems (2DESs) which are in the vicinity of nanoscaled scatterers.All these three devices exhibit a direct I-QH transition, and the transport properties under different nanaoscaled scatterers are discussed.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physics, National Taiwan University, Taipei 106, Taiwan. ctliang@phys.ntu.edu.tw.

ABSTRACT
A direct insulator-quantum Hall (I-QH) transition corresponds to a crossover/transition from the insulating regime to a high Landau level filling factor ν > 2 QH state. Such a transition has been attracting a great deal of both experimental and theoretical interests. In this study, we present three different two-dimensional electron systems (2DESs) which are in the vicinity of nanoscaled scatterers. All these three devices exhibit a direct I-QH transition, and the transport properties under different nanaoscaled scatterers are discussed.

No MeSH data available.


A plane-view of TEM image of the wafer which was cut to fabricate sample A.
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Figure 2: A plane-view of TEM image of the wafer which was cut to fabricate sample A.

Mentions: Figure 2 shows a TEM image of the wafer for fabricating Sample A. Very uniform nanoscaled InAs quantum dots can be seen. These nano-scattering centers provide strong scattering in the vicinity of the 2DES in the GaAs. The dimensions of the quantum dot are estimated to be 20 nm in diameter and 4 nm in height. Experiments were performed in a top-loading He3 cryostat equipped with a superconductor magnet. Four-terminal resistance measurements were performed using standard phase-sensitive lock-in techniques.


On the direct insulator-quantum Hall transition in two-dimensional electron systems in the vicinity of nanoscaled scatterers.

Liang CT, Lin LH, Kuang Yoa C, Lo ST, Wang YT, Lou DS, Kim GH, Yuan-Huei C, Ochiai Y, Aoki N, Chen JC, Lin Y, Chun-Feng H, Lin SD, Ritchie DA - Nanoscale Res Lett (2011)

A plane-view of TEM image of the wafer which was cut to fabricate sample A.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211178&req=5

Figure 2: A plane-view of TEM image of the wafer which was cut to fabricate sample A.
Mentions: Figure 2 shows a TEM image of the wafer for fabricating Sample A. Very uniform nanoscaled InAs quantum dots can be seen. These nano-scattering centers provide strong scattering in the vicinity of the 2DES in the GaAs. The dimensions of the quantum dot are estimated to be 20 nm in diameter and 4 nm in height. Experiments were performed in a top-loading He3 cryostat equipped with a superconductor magnet. Four-terminal resistance measurements were performed using standard phase-sensitive lock-in techniques.

Bottom Line: Such a transition has been attracting a great deal of both experimental and theoretical interests.In this study, we present three different two-dimensional electron systems (2DESs) which are in the vicinity of nanoscaled scatterers.All these three devices exhibit a direct I-QH transition, and the transport properties under different nanaoscaled scatterers are discussed.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physics, National Taiwan University, Taipei 106, Taiwan. ctliang@phys.ntu.edu.tw.

ABSTRACT
A direct insulator-quantum Hall (I-QH) transition corresponds to a crossover/transition from the insulating regime to a high Landau level filling factor ν > 2 QH state. Such a transition has been attracting a great deal of both experimental and theoretical interests. In this study, we present three different two-dimensional electron systems (2DESs) which are in the vicinity of nanoscaled scatterers. All these three devices exhibit a direct I-QH transition, and the transport properties under different nanaoscaled scatterers are discussed.

No MeSH data available.