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Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix.

Wan Z, Huang S, Green MA, Conibeer G - Nanoscale Res Lett (2011)

Bottom Line: In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system.Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation.Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

View Article: PubMed Central - HTML - PubMed

Affiliation: ARC Photovoltaics Centre of Excellence, University of New South Wales (UNSW), Sydney, Australia. z.wan@student.unsw.edu.au.

ABSTRACT
In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%). Si nanocrystals (Si-NC) containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions: furnace annealing and RTA both at 1,100°C. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

No MeSH data available.


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Raman spectrum of SRC60 after furnace annealing.
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Figure 9: Raman spectrum of SRC60 after furnace annealing.

Mentions: Figure 9 shows Raman spectrum of furnace annealed SRC60 sample. As we can see, the peak within the range of 400 to 600 cm-1can be de-convoluted to two main components: the peak centred at approximately 511 cm-1 corresponds to Si nanocrystal phase and the peak centred at approximately 480 cm-1 corresponds to the amorphous Si phase [6]. The hump at 400 cm-1 may be assigned as partial breakdown of Raman selection rules [16]. Meanwhile, two small SiC peaks are also observed at approximately 800 and 940 cm-1 attributed to the TO and LO of cubic and hexagonal SiC poly types [17,18].


Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix.

Wan Z, Huang S, Green MA, Conibeer G - Nanoscale Res Lett (2011)

Raman spectrum of SRC60 after furnace annealing.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211175&req=5

Figure 9: Raman spectrum of SRC60 after furnace annealing.
Mentions: Figure 9 shows Raman spectrum of furnace annealed SRC60 sample. As we can see, the peak within the range of 400 to 600 cm-1can be de-convoluted to two main components: the peak centred at approximately 511 cm-1 corresponds to Si nanocrystal phase and the peak centred at approximately 480 cm-1 corresponds to the amorphous Si phase [6]. The hump at 400 cm-1 may be assigned as partial breakdown of Raman selection rules [16]. Meanwhile, two small SiC peaks are also observed at approximately 800 and 940 cm-1 attributed to the TO and LO of cubic and hexagonal SiC poly types [17,18].

Bottom Line: In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system.Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation.Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

View Article: PubMed Central - HTML - PubMed

Affiliation: ARC Photovoltaics Centre of Excellence, University of New South Wales (UNSW), Sydney, Australia. z.wan@student.unsw.edu.au.

ABSTRACT
In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%). Si nanocrystals (Si-NC) containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions: furnace annealing and RTA both at 1,100°C. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

No MeSH data available.


Related in: MedlinePlus