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Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix.

Wan Z, Huang S, Green MA, Conibeer G - Nanoscale Res Lett (2011)

Bottom Line: In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system.Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation.Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

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Affiliation: ARC Photovoltaics Centre of Excellence, University of New South Wales (UNSW), Sydney, Australia. z.wan@student.unsw.edu.au.

ABSTRACT
In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%). Si nanocrystals (Si-NC) containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions: furnace annealing and RTA both at 1,100°C. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

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XRD curve comparison of SRC50 sample by RTA and furnace annealing.
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Figure 6: XRD curve comparison of SRC50 sample by RTA and furnace annealing.

Mentions: The degree of Si crystallization can be estimated by the relative intensity of XRD peaks [15]. Figures 6 and 7 compare the RTA and the furnace annealing samples in different concentration. The relative intensity of two Si peaks (at 28.4°) is almost the same under low Si concentration at 50 v% (Figure 6). The intensity difference changes significantly when Si concentration increased to 80 v% (Figure 7). However, the difference of SiC peak intensity barely changes in both Si concentrations.


Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix.

Wan Z, Huang S, Green MA, Conibeer G - Nanoscale Res Lett (2011)

XRD curve comparison of SRC50 sample by RTA and furnace annealing.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211175&req=5

Figure 6: XRD curve comparison of SRC50 sample by RTA and furnace annealing.
Mentions: The degree of Si crystallization can be estimated by the relative intensity of XRD peaks [15]. Figures 6 and 7 compare the RTA and the furnace annealing samples in different concentration. The relative intensity of two Si peaks (at 28.4°) is almost the same under low Si concentration at 50 v% (Figure 6). The intensity difference changes significantly when Si concentration increased to 80 v% (Figure 7). However, the difference of SiC peak intensity barely changes in both Si concentrations.

Bottom Line: In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system.Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation.Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

View Article: PubMed Central - HTML - PubMed

Affiliation: ARC Photovoltaics Centre of Excellence, University of New South Wales (UNSW), Sydney, Australia. z.wan@student.unsw.edu.au.

ABSTRACT
In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%). Si nanocrystals (Si-NC) containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions: furnace annealing and RTA both at 1,100°C. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

No MeSH data available.


Related in: MedlinePlus