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Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix.

Wan Z, Huang S, Green MA, Conibeer G - Nanoscale Res Lett (2011)

Bottom Line: In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system.Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation.Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

View Article: PubMed Central - HTML - PubMed

Affiliation: ARC Photovoltaics Centre of Excellence, University of New South Wales (UNSW), Sydney, Australia. z.wan@student.unsw.edu.au.

ABSTRACT
In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%). Si nanocrystals (Si-NC) containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions: furnace annealing and RTA both at 1,100°C. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

No MeSH data available.


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Wide scan XRD curve of the sample SRC60 annealed by furnace.
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Figure 3: Wide scan XRD curve of the sample SRC60 annealed by furnace.

Mentions: The crystalline properties of samples annealed by RTA and furnace are studied by XRD. Figure 3 shows a wide scan XRD curve of the sample SRC60 annealed by furnace. The Bragg peaks can be assigned to cubic Si nanocrystal as well as β-SiC nanocrystal, as shown by the indexes in the graph. This suggests the formation of both Si and β-SiC-NC which is consistent to TEM results.


Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix.

Wan Z, Huang S, Green MA, Conibeer G - Nanoscale Res Lett (2011)

Wide scan XRD curve of the sample SRC60 annealed by furnace.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211175&req=5

Figure 3: Wide scan XRD curve of the sample SRC60 annealed by furnace.
Mentions: The crystalline properties of samples annealed by RTA and furnace are studied by XRD. Figure 3 shows a wide scan XRD curve of the sample SRC60 annealed by furnace. The Bragg peaks can be assigned to cubic Si nanocrystal as well as β-SiC nanocrystal, as shown by the indexes in the graph. This suggests the formation of both Si and β-SiC-NC which is consistent to TEM results.

Bottom Line: In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system.Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation.Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

View Article: PubMed Central - HTML - PubMed

Affiliation: ARC Photovoltaics Centre of Excellence, University of New South Wales (UNSW), Sydney, Australia. z.wan@student.unsw.edu.au.

ABSTRACT
In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%). Si nanocrystals (Si-NC) containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions: furnace annealing and RTA both at 1,100°C. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

No MeSH data available.


Related in: MedlinePlus