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Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix.

Wan Z, Huang S, Green MA, Conibeer G - Nanoscale Res Lett (2011)

Bottom Line: In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system.Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation.Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

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Affiliation: ARC Photovoltaics Centre of Excellence, University of New South Wales (UNSW), Sydney, Australia. z.wan@student.unsw.edu.au.

ABSTRACT
In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%). Si nanocrystals (Si-NC) containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions: furnace annealing and RTA both at 1,100°C. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

No MeSH data available.


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Calculated Si peak intensity ratios (IC-Si/Ia-Si) in different Si concentration.
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Figure 10: Calculated Si peak intensity ratios (IC-Si/Ia-Si) in different Si concentration.

Mentions: The degree of crystallization of Si nanocrystal could also be evaluated by calculating the intensity ratio of the crystalline Si peak and amorphous Si peak: IC-Si/Ia-Si [6]. Figure 10 shows the relation of Si peak intensity ratio and silicon concentration in the SRC layers. The results indicate, for both RTA and furnace annealing conditions, when Si concentration increases, higher degree of silicon crystallization and less residual amorphous Si tend to be observed. Meanwhile, the samples from RTA show higher degree of Si crystallization in the matrix, comparing to the furnace annealing, especially in high Si concentration level.


Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix.

Wan Z, Huang S, Green MA, Conibeer G - Nanoscale Res Lett (2011)

Calculated Si peak intensity ratios (IC-Si/Ia-Si) in different Si concentration.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211175&req=5

Figure 10: Calculated Si peak intensity ratios (IC-Si/Ia-Si) in different Si concentration.
Mentions: The degree of crystallization of Si nanocrystal could also be evaluated by calculating the intensity ratio of the crystalline Si peak and amorphous Si peak: IC-Si/Ia-Si [6]. Figure 10 shows the relation of Si peak intensity ratio and silicon concentration in the SRC layers. The results indicate, for both RTA and furnace annealing conditions, when Si concentration increases, higher degree of silicon crystallization and less residual amorphous Si tend to be observed. Meanwhile, the samples from RTA show higher degree of Si crystallization in the matrix, comparing to the furnace annealing, especially in high Si concentration level.

Bottom Line: In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system.Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation.Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

View Article: PubMed Central - HTML - PubMed

Affiliation: ARC Photovoltaics Centre of Excellence, University of New South Wales (UNSW), Sydney, Australia. z.wan@student.unsw.edu.au.

ABSTRACT
In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%). Si nanocrystals (Si-NC) containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions: furnace annealing and RTA both at 1,100°C. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

No MeSH data available.


Related in: MedlinePlus