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Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films.

Fiorenza P, Lo Nigro R, Raineri V - Nanoscale Res Lett (2011)

Bottom Line: The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode.In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions.The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.

View Article: PubMed Central - HTML - PubMed

Affiliation: Istituto per la Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche, Strada VIII, 5; 95121 Catania, Italy. patrick.fiorenza@imm.cnr.it.

ABSTRACT
The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.

No MeSH data available.


C-f curves at different temperatures on the as-fabricated Pt/CCTO/IrO2 capacitors.
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Figure 2: C-f curves at different temperatures on the as-fabricated Pt/CCTO/IrO2 capacitors.

Mentions: Capacitance vs. frequency (C-f) curves have been measured in the 102-106 Hz range and at different temperatures from 298 up to 473 K. Typical capacitance versus frequency curves (Figure 2) have been collected at several temperatures and both point out to a peculiar temperature dependent relaxation behaviour: the relaxation frequency increases upon increasing temperature. This trend, observed by macroscopic measurements, is similar to that found in CCTO ceramics, thus it could be also interesting the comparison of the dielectric behaviours at nanoscale.


Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films.

Fiorenza P, Lo Nigro R, Raineri V - Nanoscale Res Lett (2011)

C-f curves at different temperatures on the as-fabricated Pt/CCTO/IrO2 capacitors.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211163&req=5

Figure 2: C-f curves at different temperatures on the as-fabricated Pt/CCTO/IrO2 capacitors.
Mentions: Capacitance vs. frequency (C-f) curves have been measured in the 102-106 Hz range and at different temperatures from 298 up to 473 K. Typical capacitance versus frequency curves (Figure 2) have been collected at several temperatures and both point out to a peculiar temperature dependent relaxation behaviour: the relaxation frequency increases upon increasing temperature. This trend, observed by macroscopic measurements, is similar to that found in CCTO ceramics, thus it could be also interesting the comparison of the dielectric behaviours at nanoscale.

Bottom Line: The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode.In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions.The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.

View Article: PubMed Central - HTML - PubMed

Affiliation: Istituto per la Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche, Strada VIII, 5; 95121 Catania, Italy. patrick.fiorenza@imm.cnr.it.

ABSTRACT
The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.

No MeSH data available.