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Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films.

Fiorenza P, Lo Nigro R, Raineri V - Nanoscale Res Lett (2011)

Bottom Line: The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode.In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions.The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.

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Affiliation: Istituto per la Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche, Strada VIII, 5; 95121 Catania, Italy. patrick.fiorenza@imm.cnr.it.

ABSTRACT
The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.

No MeSH data available.


Related in: MedlinePlus

Schematic cross section of CCTO thin films possessing columnar (a) and "bricks wall" like (b) morphologies.
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Figure 1: Schematic cross section of CCTO thin films possessing columnar (a) and "bricks wall" like (b) morphologies.

Mentions: Several papers reported on CCTO thin films grown by PLD (Pulsed Laser Deposition) or others physical methodologies presenting columnar morphologies (Figure 1a) where no barriers parallel to the electrodes are present similarly to single crystal [23,24]. Our CCTO thin films have been grown on IrO2/Ir/TiO2/SiO2/Si substrate by MOCVD, a more industrial friendly technique. They are polycrystalline with rounded grains about 100 nm wide. The film morphology is similar to that observed in ceramics, called "bricks wall" (BW) morphology, and is characterized by many grain boundaries parallel to the electrode surface (Figure 1b) in contrast with the typical columnar growth (Figure 1a) observed in CCTO films deposited by PLD.


Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films.

Fiorenza P, Lo Nigro R, Raineri V - Nanoscale Res Lett (2011)

Schematic cross section of CCTO thin films possessing columnar (a) and "bricks wall" like (b) morphologies.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211163&req=5

Figure 1: Schematic cross section of CCTO thin films possessing columnar (a) and "bricks wall" like (b) morphologies.
Mentions: Several papers reported on CCTO thin films grown by PLD (Pulsed Laser Deposition) or others physical methodologies presenting columnar morphologies (Figure 1a) where no barriers parallel to the electrodes are present similarly to single crystal [23,24]. Our CCTO thin films have been grown on IrO2/Ir/TiO2/SiO2/Si substrate by MOCVD, a more industrial friendly technique. They are polycrystalline with rounded grains about 100 nm wide. The film morphology is similar to that observed in ceramics, called "bricks wall" (BW) morphology, and is characterized by many grain boundaries parallel to the electrode surface (Figure 1b) in contrast with the typical columnar growth (Figure 1a) observed in CCTO films deposited by PLD.

Bottom Line: The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode.In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions.The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.

View Article: PubMed Central - HTML - PubMed

Affiliation: Istituto per la Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche, Strada VIII, 5; 95121 Catania, Italy. patrick.fiorenza@imm.cnr.it.

ABSTRACT
The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.

No MeSH data available.


Related in: MedlinePlus