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Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy.

Wang Y, Hu F, Hane K - Nanoscale Res Lett (2011)

Bottom Line: Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section.Thin epitaxial gratings produce the promising photoluminescence performance.This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate.PACS81.05.Ea; 81.65.Cf; 81.15.Hi.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Nanomechanics, Tohoku University, Sendai 980-8579, Japan. wyjjy@yahoo.com.

ABSTRACT
We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate.PACS81.05.Ea; 81.65.Cf; 81.15.Hi.

No MeSH data available.


Related in: MedlinePlus

Shape and the cross section of the epitaxial films. (a) The cross section of the epitaxial films; (b) freestanding epitaxial grating structures, and the inset is the zoom-in view of grating region.
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Figure 5: Shape and the cross section of the epitaxial films. (a) The cross section of the epitaxial films; (b) freestanding epitaxial grating structures, and the inset is the zoom-in view of grating region.

Mentions: The shape and the cross section of the epitaxial films are shown in Figure 5. Since the sample is currently used for the development of backside thinning technique by wet etching of Al-based compounds, some freestanding epitaxial slabs are damaged in the wet etching process. The measured thickness of epitaxial films is about 510 nm, a little larger than the estimated thickness of approximately 420 nm. The freestanding III-nitride slab is deflected due to the residual stress, and the slab is thinner than that on silicon substrate, as shown in Figure 5a. One cross-section image of epitaxial grating is illustrated in Figure 5b. The inset is the zoom-in image of epitaxial grating, and the shape changes are clearly observed on different templates.


Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy.

Wang Y, Hu F, Hane K - Nanoscale Res Lett (2011)

Shape and the cross section of the epitaxial films. (a) The cross section of the epitaxial films; (b) freestanding epitaxial grating structures, and the inset is the zoom-in view of grating region.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211162&req=5

Figure 5: Shape and the cross section of the epitaxial films. (a) The cross section of the epitaxial films; (b) freestanding epitaxial grating structures, and the inset is the zoom-in view of grating region.
Mentions: The shape and the cross section of the epitaxial films are shown in Figure 5. Since the sample is currently used for the development of backside thinning technique by wet etching of Al-based compounds, some freestanding epitaxial slabs are damaged in the wet etching process. The measured thickness of epitaxial films is about 510 nm, a little larger than the estimated thickness of approximately 420 nm. The freestanding III-nitride slab is deflected due to the residual stress, and the slab is thinner than that on silicon substrate, as shown in Figure 5a. One cross-section image of epitaxial grating is illustrated in Figure 5b. The inset is the zoom-in image of epitaxial grating, and the shape changes are clearly observed on different templates.

Bottom Line: Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section.Thin epitaxial gratings produce the promising photoluminescence performance.This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate.PACS81.05.Ea; 81.65.Cf; 81.15.Hi.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Nanomechanics, Tohoku University, Sendai 980-8579, Japan. wyjjy@yahoo.com.

ABSTRACT
We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate.PACS81.05.Ea; 81.65.Cf; 81.15.Hi.

No MeSH data available.


Related in: MedlinePlus