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Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy.

Wang Y, Hu F, Hane K - Nanoscale Res Lett (2011)

Bottom Line: Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section.Thin epitaxial gratings produce the promising photoluminescence performance.This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate.PACS81.05.Ea; 81.65.Cf; 81.15.Hi.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Nanomechanics, Tohoku University, Sendai 980-8579, Japan. wyjjy@yahoo.com.

ABSTRACT
We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate.PACS81.05.Ea; 81.65.Cf; 81.15.Hi.

No MeSH data available.


SEMimages of GaN grating templates for the epitaxial growth of GaN. (a) 500-nm period, 300-nm-wide grating; (b) 500-nm period, 200-nm-wide grating; (c) 450-nm period, 200-nm-wide grating; (d) 400-nm period, 200-nm wide grating.
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Figure 2: SEMimages of GaN grating templates for the epitaxial growth of GaN. (a) 500-nm period, 300-nm-wide grating; (b) 500-nm period, 200-nm-wide grating; (c) 450-nm period, 200-nm-wide grating; (d) 400-nm period, 200-nm wide grating.

Mentions: Various freestanding GaN gratings are fabricated on a GaN-on-silicon substrate by a combination of EB lithography, FAB etching of GaN and DRIE of silicon [20]. Figure 2 illustrates scanning electron microscope (SEM) images of fabricated freestanding GaN gratings. The grating period and the grating width are expressed by P and W, as shown in Figure 2a, where P is 500 nm and W is approximately 300 nm. One period grating consists of the grating ridge and the grating opening. The GaN gratings illustrated in Figure 2b,c,d, have the same grating width of approximately 200 nm and have different grating periods of 500, 450, and 400 nm, respectively. The variation in the grating width W means the different distributions between the grating ridge and the grating opening, which plays an important role in the epitaxial growth.


Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy.

Wang Y, Hu F, Hane K - Nanoscale Res Lett (2011)

SEMimages of GaN grating templates for the epitaxial growth of GaN. (a) 500-nm period, 300-nm-wide grating; (b) 500-nm period, 200-nm-wide grating; (c) 450-nm period, 200-nm-wide grating; (d) 400-nm period, 200-nm wide grating.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211162&req=5

Figure 2: SEMimages of GaN grating templates for the epitaxial growth of GaN. (a) 500-nm period, 300-nm-wide grating; (b) 500-nm period, 200-nm-wide grating; (c) 450-nm period, 200-nm-wide grating; (d) 400-nm period, 200-nm wide grating.
Mentions: Various freestanding GaN gratings are fabricated on a GaN-on-silicon substrate by a combination of EB lithography, FAB etching of GaN and DRIE of silicon [20]. Figure 2 illustrates scanning electron microscope (SEM) images of fabricated freestanding GaN gratings. The grating period and the grating width are expressed by P and W, as shown in Figure 2a, where P is 500 nm and W is approximately 300 nm. One period grating consists of the grating ridge and the grating opening. The GaN gratings illustrated in Figure 2b,c,d, have the same grating width of approximately 200 nm and have different grating periods of 500, 450, and 400 nm, respectively. The variation in the grating width W means the different distributions between the grating ridge and the grating opening, which plays an important role in the epitaxial growth.

Bottom Line: Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section.Thin epitaxial gratings produce the promising photoluminescence performance.This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate.PACS81.05.Ea; 81.65.Cf; 81.15.Hi.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Nanomechanics, Tohoku University, Sendai 980-8579, Japan. wyjjy@yahoo.com.

ABSTRACT
We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate.PACS81.05.Ea; 81.65.Cf; 81.15.Hi.

No MeSH data available.