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Conductive-probe atomic force microscopy characterization of silicon nanowire.

Alvarez J, Ngo I, Gueunier-Farret ME, Kleider JP, Yu L, Cabarrocas PR, Perraud S, Rouvière E, Celle C, Mouchet C, Simonato JP - Nanoscale Res Lett (2011)

Bottom Line: Local current mapping shows that the wires have internal microstructures.Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates.The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

View Article: PubMed Central - HTML - PubMed

Affiliation: Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P-Sud, UPMC Univ Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. jose.alvarez@supelec.fr.

ABSTRACT
The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

No MeSH data available.


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CP-AFM I-V measurements on single phosphorus-doped SiNWs for different doping levels : (a) undoped, (b) [P] ≈ 1 × 1018 cm-3, and (c) [P] ≈ 1 × 1020 cm-3
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Figure 9: CP-AFM I-V measurements on single phosphorus-doped SiNWs for different doping levels : (a) undoped, (b) [P] ≈ 1 × 1018 cm-3, and (c) [P] ≈ 1 × 1020 cm-3

Mentions: As illustrated in Figure 9, local I-V measurements were performed for each sample on top of the SiNW using a PtIr AFM tip. All the three samples show a linear behavior with inverse slopes of 1.9-2.3 × 108, 5.3-6.7 × 106, and 4.5-10 × 104 Ω, respectively, for the undoped, 1 × 1018 and 1 × 1020 for the doped samples. These values illustrate the total measured resistance Rtot which can be decomposed as follows:


Conductive-probe atomic force microscopy characterization of silicon nanowire.

Alvarez J, Ngo I, Gueunier-Farret ME, Kleider JP, Yu L, Cabarrocas PR, Perraud S, Rouvière E, Celle C, Mouchet C, Simonato JP - Nanoscale Res Lett (2011)

CP-AFM I-V measurements on single phosphorus-doped SiNWs for different doping levels : (a) undoped, (b) [P] ≈ 1 × 1018 cm-3, and (c) [P] ≈ 1 × 1020 cm-3
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211155&req=5

Figure 9: CP-AFM I-V measurements on single phosphorus-doped SiNWs for different doping levels : (a) undoped, (b) [P] ≈ 1 × 1018 cm-3, and (c) [P] ≈ 1 × 1020 cm-3
Mentions: As illustrated in Figure 9, local I-V measurements were performed for each sample on top of the SiNW using a PtIr AFM tip. All the three samples show a linear behavior with inverse slopes of 1.9-2.3 × 108, 5.3-6.7 × 106, and 4.5-10 × 104 Ω, respectively, for the undoped, 1 × 1018 and 1 × 1020 for the doped samples. These values illustrate the total measured resistance Rtot which can be decomposed as follows:

Bottom Line: Local current mapping shows that the wires have internal microstructures.Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates.The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

View Article: PubMed Central - HTML - PubMed

Affiliation: Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P-Sud, UPMC Univ Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. jose.alvarez@supelec.fr.

ABSTRACT
The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

No MeSH data available.


Related in: MedlinePlus