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Conductive-probe atomic force microscopy characterization of silicon nanowire.

Alvarez J, Ngo I, Gueunier-Farret ME, Kleider JP, Yu L, Cabarrocas PR, Perraud S, Rouvière E, Celle C, Mouchet C, Simonato JP - Nanoscale Res Lett (2011)

Bottom Line: Local current mapping shows that the wires have internal microstructures.Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates.The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

View Article: PubMed Central - HTML - PubMed

Affiliation: Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P-Sud, UPMC Univ Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. jose.alvarez@supelec.fr.

ABSTRACT
The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

No MeSH data available.


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Height and local resistance profile involving single SiNWs for different phosphorus doping levels : (a) undoped, (b) [P] ≈ 1 × 1018 cm-3, and (c) [P] ≈ 1 × 1020 cm-3.
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Figure 8: Height and local resistance profile involving single SiNWs for different phosphorus doping levels : (a) undoped, (b) [P] ≈ 1 × 1018 cm-3, and (c) [P] ≈ 1 × 1020 cm-3.

Mentions: The three samples were carefully imaged, and a statistic was made in a few tenths of SiNWs. An example of cross-sectional profiles involving SiNWs is illustrated in Figure 8. The conducting wires are easily put in evidence with a decrease of the local resistance by several orders of magnitude with respect to the background signal. For the most highly doped sample, the local resistance of the SiNW drops by more than six orders of magnitude, whereas the intermediate doped and undoped samples show a decrease of four and three orders of magnitude, respectively. These measurements clearly point out that the SiNWs conductivity can be controlled by the incorporation of phosphorus impurities. However, the phosphorus doping efficiency and activation cannot be directly discussed through such measurements. Resistivity measurements are indeed required.


Conductive-probe atomic force microscopy characterization of silicon nanowire.

Alvarez J, Ngo I, Gueunier-Farret ME, Kleider JP, Yu L, Cabarrocas PR, Perraud S, Rouvière E, Celle C, Mouchet C, Simonato JP - Nanoscale Res Lett (2011)

Height and local resistance profile involving single SiNWs for different phosphorus doping levels : (a) undoped, (b) [P] ≈ 1 × 1018 cm-3, and (c) [P] ≈ 1 × 1020 cm-3.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211155&req=5

Figure 8: Height and local resistance profile involving single SiNWs for different phosphorus doping levels : (a) undoped, (b) [P] ≈ 1 × 1018 cm-3, and (c) [P] ≈ 1 × 1020 cm-3.
Mentions: The three samples were carefully imaged, and a statistic was made in a few tenths of SiNWs. An example of cross-sectional profiles involving SiNWs is illustrated in Figure 8. The conducting wires are easily put in evidence with a decrease of the local resistance by several orders of magnitude with respect to the background signal. For the most highly doped sample, the local resistance of the SiNW drops by more than six orders of magnitude, whereas the intermediate doped and undoped samples show a decrease of four and three orders of magnitude, respectively. These measurements clearly point out that the SiNWs conductivity can be controlled by the incorporation of phosphorus impurities. However, the phosphorus doping efficiency and activation cannot be directly discussed through such measurements. Resistivity measurements are indeed required.

Bottom Line: Local current mapping shows that the wires have internal microstructures.Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates.The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

View Article: PubMed Central - HTML - PubMed

Affiliation: Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P-Sud, UPMC Univ Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. jose.alvarez@supelec.fr.

ABSTRACT
The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

No MeSH data available.


Related in: MedlinePlus