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Conductive-probe atomic force microscopy characterization of silicon nanowire.

Alvarez J, Ngo I, Gueunier-Farret ME, Kleider JP, Yu L, Cabarrocas PR, Perraud S, Rouvière E, Celle C, Mouchet C, Simonato JP - Nanoscale Res Lett (2011)

Bottom Line: Local current mapping shows that the wires have internal microstructures.Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates.The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

View Article: PubMed Central - HTML - PubMed

Affiliation: Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P-Sud, UPMC Univ Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. jose.alvarez@supelec.fr.

ABSTRACT
The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

No MeSH data available.


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I-V measurement on individual SiNW measured by CP-AFM.
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Figure 6: I-V measurement on individual SiNW measured by CP-AFM.

Mentions: In order to get more precise information about the variation of the local resistance in function of the applied bias, CP-AFM was locally used for investigating the I-V characteristics on individual SiNWs. Figure 6 displays a log-log plot of the I-V characteristics where two identifiable slopes are put in evidence. Indeed, the analysis of the slopes following a power-law dependence (I ∝ Vn) allows us to estimate two transport regimes with a transition around 1 V. The slope n = 1.6 (V < 1 V) points out charge injection which is a characteristic of a space-charge limited current (SCLC) [21]. The slope n = 3 (V > 1 V) indicates a trap-limited SCLC, that can be analyzed in the frame of a trap distribution with an increasing density of states toward the band edge. Interface and surface states in low-dimensional semiconductors such as nanowires are expected to be the most common defects, which greatly influence the electrical transport properties [22]. We also should keep in mind that SiNWs were here obtained thanks to an a-Si:H layer that is known to possess a quite large density of states in the gap, with exponential band tails.


Conductive-probe atomic force microscopy characterization of silicon nanowire.

Alvarez J, Ngo I, Gueunier-Farret ME, Kleider JP, Yu L, Cabarrocas PR, Perraud S, Rouvière E, Celle C, Mouchet C, Simonato JP - Nanoscale Res Lett (2011)

I-V measurement on individual SiNW measured by CP-AFM.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211155&req=5

Figure 6: I-V measurement on individual SiNW measured by CP-AFM.
Mentions: In order to get more precise information about the variation of the local resistance in function of the applied bias, CP-AFM was locally used for investigating the I-V characteristics on individual SiNWs. Figure 6 displays a log-log plot of the I-V characteristics where two identifiable slopes are put in evidence. Indeed, the analysis of the slopes following a power-law dependence (I ∝ Vn) allows us to estimate two transport regimes with a transition around 1 V. The slope n = 1.6 (V < 1 V) points out charge injection which is a characteristic of a space-charge limited current (SCLC) [21]. The slope n = 3 (V > 1 V) indicates a trap-limited SCLC, that can be analyzed in the frame of a trap distribution with an increasing density of states toward the band edge. Interface and surface states in low-dimensional semiconductors such as nanowires are expected to be the most common defects, which greatly influence the electrical transport properties [22]. We also should keep in mind that SiNWs were here obtained thanks to an a-Si:H layer that is known to possess a quite large density of states in the gap, with exponential band tails.

Bottom Line: Local current mapping shows that the wires have internal microstructures.Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates.The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

View Article: PubMed Central - HTML - PubMed

Affiliation: Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P-Sud, UPMC Univ Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. jose.alvarez@supelec.fr.

ABSTRACT
The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

No MeSH data available.


Related in: MedlinePlus