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Conductive-probe atomic force microscopy characterization of silicon nanowire.

Alvarez J, Ngo I, Gueunier-Farret ME, Kleider JP, Yu L, Cabarrocas PR, Perraud S, Rouvière E, Celle C, Mouchet C, Simonato JP - Nanoscale Res Lett (2011)

Bottom Line: Local current mapping shows that the wires have internal microstructures.Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates.The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

View Article: PubMed Central - HTML - PubMed

Affiliation: Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P-Sud, UPMC Univ Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. jose.alvarez@supelec.fr.

ABSTRACT
The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

No MeSH data available.


Related in: MedlinePlus

Topography and local resistance maps depicting horizontal SiNWs randomly oriented. The electrical measurements were done at different applied biases: 2, 6, and 10 V.
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Figure 5: Topography and local resistance maps depicting horizontal SiNWs randomly oriented. The electrical measurements were done at different applied biases: 2, 6, and 10 V.

Mentions: Horizontal SiNWs have also been characterized under different applied voltages. As illustrated in Figure 5, the local resistance maps were measured in the same region at 2, 6, and 10 V, respectively. The analysis of the electrical images points out a local resistance that decreases in function of the applied voltage. More specifically, the local resistance of SiNWs measured at 2 V decreases one order of magnitude at 6 V and two orders of magnitude at 10 V. Such behavior was also observed for negative applied biases. An interesting observation comes from the high bias regime (V > 2 V) which underlines the increase of local resistance of the wire versus its length. However, high bias regime can also broaden the electrical images of wires.


Conductive-probe atomic force microscopy characterization of silicon nanowire.

Alvarez J, Ngo I, Gueunier-Farret ME, Kleider JP, Yu L, Cabarrocas PR, Perraud S, Rouvière E, Celle C, Mouchet C, Simonato JP - Nanoscale Res Lett (2011)

Topography and local resistance maps depicting horizontal SiNWs randomly oriented. The electrical measurements were done at different applied biases: 2, 6, and 10 V.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211155&req=5

Figure 5: Topography and local resistance maps depicting horizontal SiNWs randomly oriented. The electrical measurements were done at different applied biases: 2, 6, and 10 V.
Mentions: Horizontal SiNWs have also been characterized under different applied voltages. As illustrated in Figure 5, the local resistance maps were measured in the same region at 2, 6, and 10 V, respectively. The analysis of the electrical images points out a local resistance that decreases in function of the applied voltage. More specifically, the local resistance of SiNWs measured at 2 V decreases one order of magnitude at 6 V and two orders of magnitude at 10 V. Such behavior was also observed for negative applied biases. An interesting observation comes from the high bias regime (V > 2 V) which underlines the increase of local resistance of the wire versus its length. However, high bias regime can also broaden the electrical images of wires.

Bottom Line: Local current mapping shows that the wires have internal microstructures.Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates.The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

View Article: PubMed Central - HTML - PubMed

Affiliation: Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P-Sud, UPMC Univ Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. jose.alvarez@supelec.fr.

ABSTRACT
The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

No MeSH data available.


Related in: MedlinePlus