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Conductive-probe atomic force microscopy characterization of silicon nanowire.

Alvarez J, Ngo I, Gueunier-Farret ME, Kleider JP, Yu L, Cabarrocas PR, Perraud S, Rouvière E, Celle C, Mouchet C, Simonato JP - Nanoscale Res Lett (2011)

Bottom Line: Local current mapping shows that the wires have internal microstructures.Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates.The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

View Article: PubMed Central - HTML - PubMed

Affiliation: Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P-Sud, UPMC Univ Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. jose.alvarez@supelec.fr.

ABSTRACT
The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

No MeSH data available.


Related in: MedlinePlus

Topography and local resistance maps illustrating a micrometer-wide horizontal silicon wire. The electrical image was obtained under a bias of 2 V.
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Figure 4: Topography and local resistance maps illustrating a micrometer-wide horizontal silicon wire. The electrical image was obtained under a bias of 2 V.

Mentions: In Figure 4, a 20 × 20 μm2 surface scan which displays the topography and the electrical properties of a micrometer-wide horizontal silicon oval shaped wire (1 μm wide and 300 nm thick) is presented. The topography points out an inhomogeneous surface morphology that is clearly confirmed by the local mapping of resistance. Indeed, conductive paths along the wire are put in evidence and linked to the topographic features of the wire envelope. The accuracy of these features depends essentially on convolution effects associated to the AFM tip shape. It seems reasonable that several SiNWs have been produced and have partially contributed to the growth of this long and wide silicon wire [10] explaining the electrical and surface microstructure.


Conductive-probe atomic force microscopy characterization of silicon nanowire.

Alvarez J, Ngo I, Gueunier-Farret ME, Kleider JP, Yu L, Cabarrocas PR, Perraud S, Rouvière E, Celle C, Mouchet C, Simonato JP - Nanoscale Res Lett (2011)

Topography and local resistance maps illustrating a micrometer-wide horizontal silicon wire. The electrical image was obtained under a bias of 2 V.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211155&req=5

Figure 4: Topography and local resistance maps illustrating a micrometer-wide horizontal silicon wire. The electrical image was obtained under a bias of 2 V.
Mentions: In Figure 4, a 20 × 20 μm2 surface scan which displays the topography and the electrical properties of a micrometer-wide horizontal silicon oval shaped wire (1 μm wide and 300 nm thick) is presented. The topography points out an inhomogeneous surface morphology that is clearly confirmed by the local mapping of resistance. Indeed, conductive paths along the wire are put in evidence and linked to the topographic features of the wire envelope. The accuracy of these features depends essentially on convolution effects associated to the AFM tip shape. It seems reasonable that several SiNWs have been produced and have partially contributed to the growth of this long and wide silicon wire [10] explaining the electrical and surface microstructure.

Bottom Line: Local current mapping shows that the wires have internal microstructures.Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates.The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

View Article: PubMed Central - HTML - PubMed

Affiliation: Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P-Sud, UPMC Univ Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. jose.alvarez@supelec.fr.

ABSTRACT
The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

No MeSH data available.


Related in: MedlinePlus