Limits...
Conductive-probe atomic force microscopy characterization of silicon nanowire.

Alvarez J, Ngo I, Gueunier-Farret ME, Kleider JP, Yu L, Cabarrocas PR, Perraud S, Rouvière E, Celle C, Mouchet C, Simonato JP - Nanoscale Res Lett (2011)

Bottom Line: Local current mapping shows that the wires have internal microstructures.Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates.The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

View Article: PubMed Central - HTML - PubMed

Affiliation: Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P-Sud, UPMC Univ Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. jose.alvarez@supelec.fr.

ABSTRACT
The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

No MeSH data available.


Related in: MedlinePlus

Sketch illustrating the details of CP-AFM measurements on (a) horizontal and (b) vertical SiNWs.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC3211155&req=5

Figure 2: Sketch illustrating the details of CP-AFM measurements on (a) horizontal and (b) vertical SiNWs.

Mentions: The CP-AFM details and more specifically the sample configuration and biasing are displayed in Figure 2. In case of horizontal SiNWs, the DC bias voltage was applied to the ITO pad, while for vertical SiNWs it was applied through the doped silicon wafer.


Conductive-probe atomic force microscopy characterization of silicon nanowire.

Alvarez J, Ngo I, Gueunier-Farret ME, Kleider JP, Yu L, Cabarrocas PR, Perraud S, Rouvière E, Celle C, Mouchet C, Simonato JP - Nanoscale Res Lett (2011)

Sketch illustrating the details of CP-AFM measurements on (a) horizontal and (b) vertical SiNWs.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211155&req=5

Figure 2: Sketch illustrating the details of CP-AFM measurements on (a) horizontal and (b) vertical SiNWs.
Mentions: The CP-AFM details and more specifically the sample configuration and biasing are displayed in Figure 2. In case of horizontal SiNWs, the DC bias voltage was applied to the ITO pad, while for vertical SiNWs it was applied through the doped silicon wafer.

Bottom Line: Local current mapping shows that the wires have internal microstructures.Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates.The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

View Article: PubMed Central - HTML - PubMed

Affiliation: Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P-Sud, UPMC Univ Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. jose.alvarez@supelec.fr.

ABSTRACT
The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

No MeSH data available.


Related in: MedlinePlus