Limits...
Conductive-probe atomic force microscopy characterization of silicon nanowire.

Alvarez J, Ngo I, Gueunier-Farret ME, Kleider JP, Yu L, Cabarrocas PR, Perraud S, Rouvière E, Celle C, Mouchet C, Simonato JP - Nanoscale Res Lett (2011)

Bottom Line: Local current mapping shows that the wires have internal microstructures.Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates.The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

View Article: PubMed Central - HTML - PubMed

Affiliation: Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P-Sud, UPMC Univ Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. jose.alvarez@supelec.fr.

ABSTRACT
The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

No MeSH data available.


Related in: MedlinePlus

SEM picture illustrating(a) a single horizontal Si wire and (b) a carpet of vertical SiNWs.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC3211155&req=5

Figure 1: SEM picture illustrating(a) a single horizontal Si wire and (b) a carpet of vertical SiNWs.

Mentions: The IPSLS [10,13,14] approach, using indium (In) catalyst droplets and a hydrogenated amorphous silicon (a-Si:H) layer, was used to grow horizontal SiNWs. More precisely, In catalyst droplets were prepared by superficial reduction of an indium tin oxide (ITO) layer, which was then coated by an a-Si:H layer. The growth activation of SiNWs is done during an annealing process at temperatures in the range of 300-500°C. The mechanism for obtaining horizontal SiNWs is guided by the liquid In drop which interacts with the predeposited a-Si:H transforming it into crystalline SiNWs. Figure 1a illustrates a scanning electron microscopy (SEM) image of a horizontal Si wire of 400-nm diameter which extends over one hundred of microns. The In catalyst is still visible at the end of the wire.


Conductive-probe atomic force microscopy characterization of silicon nanowire.

Alvarez J, Ngo I, Gueunier-Farret ME, Kleider JP, Yu L, Cabarrocas PR, Perraud S, Rouvière E, Celle C, Mouchet C, Simonato JP - Nanoscale Res Lett (2011)

SEM picture illustrating(a) a single horizontal Si wire and (b) a carpet of vertical SiNWs.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211155&req=5

Figure 1: SEM picture illustrating(a) a single horizontal Si wire and (b) a carpet of vertical SiNWs.
Mentions: The IPSLS [10,13,14] approach, using indium (In) catalyst droplets and a hydrogenated amorphous silicon (a-Si:H) layer, was used to grow horizontal SiNWs. More precisely, In catalyst droplets were prepared by superficial reduction of an indium tin oxide (ITO) layer, which was then coated by an a-Si:H layer. The growth activation of SiNWs is done during an annealing process at temperatures in the range of 300-500°C. The mechanism for obtaining horizontal SiNWs is guided by the liquid In drop which interacts with the predeposited a-Si:H transforming it into crystalline SiNWs. Figure 1a illustrates a scanning electron microscopy (SEM) image of a horizontal Si wire of 400-nm diameter which extends over one hundred of microns. The In catalyst is still visible at the end of the wire.

Bottom Line: Local current mapping shows that the wires have internal microstructures.Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates.The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

View Article: PubMed Central - HTML - PubMed

Affiliation: Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P-Sud, UPMC Univ Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. jose.alvarez@supelec.fr.

ABSTRACT
The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

No MeSH data available.


Related in: MedlinePlus