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Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy.

Giannazzo F, Sonde S, Rimini E, Raineri V - Nanoscale Res Lett (2011)

Bottom Line: In this article, a scanning probe method based on nanoscale capacitance measurements was used to investigate the lateral homogeneity of the electron mean free path both in pristine and ion-irradiated graphene.The local variations in the electronic transport properties were explained taking into account the scattering of electrons by charged impurities and point defects (vacancies).The local density of the charged impurities and vacancies were determined for different irradiated ion fluences.

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Affiliation: CNR-IMM, Strada VIII, 5, Zona Industriale, 95121, Catania, Italy. filippo.giannazzo@imm.cnr.it.

ABSTRACT
In this article, a scanning probe method based on nanoscale capacitance measurements was used to investigate the lateral homogeneity of the electron mean free path both in pristine and ion-irradiated graphene. The local variations in the electronic transport properties were explained taking into account the scattering of electrons by charged impurities and point defects (vacancies). Electron mean free path is mainly limited by charged impurities in unirradiated graphene, whereas an important role is played by lattice vacancies after irradiation. The local density of the charged impurities and vacancies were determined for different irradiated ion fluences.

No MeSH data available.


Average vacancy density as a function of the irradiated fluence.
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Figure 6: Average vacancy density as a function of the irradiated fluence.

Mentions: For each fluence, the weighted average of the vacancy density on the probed area can be obtained by , being Nvac,i the values of the vacancy densities in the histograms and fi the associated frequencies. The obtained 〈Nvac〉 exhibits a linear increase as a function of fluence, as reported in Figure 6. This trend can be fitted by the following relation:


Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy.

Giannazzo F, Sonde S, Rimini E, Raineri V - Nanoscale Res Lett (2011)

Average vacancy density as a function of the irradiated fluence.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211153&req=5

Figure 6: Average vacancy density as a function of the irradiated fluence.
Mentions: For each fluence, the weighted average of the vacancy density on the probed area can be obtained by , being Nvac,i the values of the vacancy densities in the histograms and fi the associated frequencies. The obtained 〈Nvac〉 exhibits a linear increase as a function of fluence, as reported in Figure 6. This trend can be fitted by the following relation:

Bottom Line: In this article, a scanning probe method based on nanoscale capacitance measurements was used to investigate the lateral homogeneity of the electron mean free path both in pristine and ion-irradiated graphene.The local variations in the electronic transport properties were explained taking into account the scattering of electrons by charged impurities and point defects (vacancies).The local density of the charged impurities and vacancies were determined for different irradiated ion fluences.

View Article: PubMed Central - HTML - PubMed

Affiliation: CNR-IMM, Strada VIII, 5, Zona Industriale, 95121, Catania, Italy. filippo.giannazzo@imm.cnr.it.

ABSTRACT
In this article, a scanning probe method based on nanoscale capacitance measurements was used to investigate the lateral homogeneity of the electron mean free path both in pristine and ion-irradiated graphene. The local variations in the electronic transport properties were explained taking into account the scattering of electrons by charged impurities and point defects (vacancies). Electron mean free path is mainly limited by charged impurities in unirradiated graphene, whereas an important role is played by lattice vacancies after irradiation. The local density of the charged impurities and vacancies were determined for different irradiated ion fluences.

No MeSH data available.