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Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy.

Giannazzo F, Sonde S, Rimini E, Raineri V - Nanoscale Res Lett (2011)

Bottom Line: In this article, a scanning probe method based on nanoscale capacitance measurements was used to investigate the lateral homogeneity of the electron mean free path both in pristine and ion-irradiated graphene.The local variations in the electronic transport properties were explained taking into account the scattering of electrons by charged impurities and point defects (vacancies).The local density of the charged impurities and vacancies were determined for different irradiated ion fluences.

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Affiliation: CNR-IMM, Strada VIII, 5, Zona Industriale, 95121, Catania, Italy. filippo.giannazzo@imm.cnr.it.

ABSTRACT
In this article, a scanning probe method based on nanoscale capacitance measurements was used to investigate the lateral homogeneity of the electron mean free path both in pristine and ion-irradiated graphene. The local variations in the electronic transport properties were explained taking into account the scattering of electrons by charged impurities and point defects (vacancies). Electron mean free path is mainly limited by charged impurities in unirradiated graphene, whereas an important role is played by lattice vacancies after irradiation. The local density of the charged impurities and vacancies were determined for different irradiated ion fluences.

No MeSH data available.


Local electron mean free path versus the Fermi energy measured on array of several tip positions on pristine and irradiated graphene at different fluences. On pristine graphene (a). On irradiated graphene with 500 keV C+ ions at fluences 1 × 1013 cm-2 (b) and 1 × 1014 cm-2 (c), respectively.
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Figure 4: Local electron mean free path versus the Fermi energy measured on array of several tip positions on pristine and irradiated graphene at different fluences. On pristine graphene (a). On irradiated graphene with 500 keV C+ ions at fluences 1 × 1013 cm-2 (b) and 1 × 1014 cm-2 (c), respectively.

Mentions: In Figure 4a, l versus EF measured on an array of 5 × 5 tip positions on pristine graphene is reported. By fitting each curve of the array with Equation 2, the local density Nci for each probed position can be extracted. The histogram of the charged impurity density on the analyzed area is reported in Figure 5a. It exhibits a Gaussian distribution peaked at 〈Nci〉 = 50 × 1010 cm-2 and with FWHM of 4 × 1010 cm-2.


Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy.

Giannazzo F, Sonde S, Rimini E, Raineri V - Nanoscale Res Lett (2011)

Local electron mean free path versus the Fermi energy measured on array of several tip positions on pristine and irradiated graphene at different fluences. On pristine graphene (a). On irradiated graphene with 500 keV C+ ions at fluences 1 × 1013 cm-2 (b) and 1 × 1014 cm-2 (c), respectively.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211153&req=5

Figure 4: Local electron mean free path versus the Fermi energy measured on array of several tip positions on pristine and irradiated graphene at different fluences. On pristine graphene (a). On irradiated graphene with 500 keV C+ ions at fluences 1 × 1013 cm-2 (b) and 1 × 1014 cm-2 (c), respectively.
Mentions: In Figure 4a, l versus EF measured on an array of 5 × 5 tip positions on pristine graphene is reported. By fitting each curve of the array with Equation 2, the local density Nci for each probed position can be extracted. The histogram of the charged impurity density on the analyzed area is reported in Figure 5a. It exhibits a Gaussian distribution peaked at 〈Nci〉 = 50 × 1010 cm-2 and with FWHM of 4 × 1010 cm-2.

Bottom Line: In this article, a scanning probe method based on nanoscale capacitance measurements was used to investigate the lateral homogeneity of the electron mean free path both in pristine and ion-irradiated graphene.The local variations in the electronic transport properties were explained taking into account the scattering of electrons by charged impurities and point defects (vacancies).The local density of the charged impurities and vacancies were determined for different irradiated ion fluences.

View Article: PubMed Central - HTML - PubMed

Affiliation: CNR-IMM, Strada VIII, 5, Zona Industriale, 95121, Catania, Italy. filippo.giannazzo@imm.cnr.it.

ABSTRACT
In this article, a scanning probe method based on nanoscale capacitance measurements was used to investigate the lateral homogeneity of the electron mean free path both in pristine and ion-irradiated graphene. The local variations in the electronic transport properties were explained taking into account the scattering of electrons by charged impurities and point defects (vacancies). Electron mean free path is mainly limited by charged impurities in unirradiated graphene, whereas an important role is played by lattice vacancies after irradiation. The local density of the charged impurities and vacancies were determined for different irradiated ion fluences.

No MeSH data available.