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GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation.

Chaqmaqchee FA, Mazzucato S, Oduncuoglu M, Balkan N, Sun Y, Gunes M, Hugues M, Hopkinson M - Nanoscale Res Lett (2011)

Bottom Line: It was characterised through I-V, L-V and by spectral photoluminescence, electroluminescence and electro-photoluminescence as a function of temperature and applied bias.Cavity resonance and gain peak curves have been calculated at different temperatures.Good agreement between experimental and theoretical results has been obtained.

View Article: PubMed Central - HTML - PubMed

Affiliation: School of Computer Science and Electronic Engineering, University of Essex, Colchester CO4 3SQ, UK. faicha@essex.ac.uk.

ABSTRACT
Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surface emitters the operation of which is based on the longitudinal injection of electrons and holes in the active region. These devices can be designed to be used as vertical cavity surface emitting laser or, as in this study, as a vertical cavity semiconductor optical amplifier (VCSOA). This study investigates the prospects for a Hellish VCSOA based on GaInNAs/GaAs material for operation in the 1.3-μm wavelength range. Hellish VCSOAs have increased functionality, and use undoped distributed Bragg reflectors; and this coupled with direct injection into the active region is expected to yield improvements in the gain and bandwidth. The design of the Hellish VCSOA is based on the transfer matrix method and the optical field distribution within the structure, where the determination of the position of quantum wells is crucial. A full assessment of Hellish VCSOAs has been performed in a device with eleven layers of Ga0.35In0.65N0.02As0.08/GaAs quantum wells (QWs) in the active region. It was characterised through I-V, L-V and by spectral photoluminescence, electroluminescence and electro-photoluminescence as a function of temperature and applied bias. Cavity resonance and gain peak curves have been calculated at different temperatures. Good agreement between experimental and theoretical results has been obtained.

No MeSH data available.


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EL, PL, EPL and SUM (EL + PL) spectra at T = 87 K.
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Figure 11: EL, PL, EPL and SUM (EL + PL) spectra at T = 87 K.

Mentions: In Figure 11, the T = 87 K EL, PL, EPL spectra and the sum of EL and PL are plotted. The PL spectrum presents a broad peak at around 1250-nm wavelength and a full-width-at-half-maximum of 13 meV. As stated before, it corresponds to the overlap of the active region gain spectrum and the cavity resonance reflectivity that filters and narrows the emission. Variations in the peak position are ascribable to fluctuations in the cavity resonance. The EL spectrum measured at the same temperature shows the emission peak at around 1.03 eV and by comparing the SUM (EL + PL) and EPL spectrum, the presence of optical gain was clearly visible. Signal amplification occurs when both electrical and optical inputs are applied.


GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation.

Chaqmaqchee FA, Mazzucato S, Oduncuoglu M, Balkan N, Sun Y, Gunes M, Hugues M, Hopkinson M - Nanoscale Res Lett (2011)

EL, PL, EPL and SUM (EL + PL) spectra at T = 87 K.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211148&req=5

Figure 11: EL, PL, EPL and SUM (EL + PL) spectra at T = 87 K.
Mentions: In Figure 11, the T = 87 K EL, PL, EPL spectra and the sum of EL and PL are plotted. The PL spectrum presents a broad peak at around 1250-nm wavelength and a full-width-at-half-maximum of 13 meV. As stated before, it corresponds to the overlap of the active region gain spectrum and the cavity resonance reflectivity that filters and narrows the emission. Variations in the peak position are ascribable to fluctuations in the cavity resonance. The EL spectrum measured at the same temperature shows the emission peak at around 1.03 eV and by comparing the SUM (EL + PL) and EPL spectrum, the presence of optical gain was clearly visible. Signal amplification occurs when both electrical and optical inputs are applied.

Bottom Line: It was characterised through I-V, L-V and by spectral photoluminescence, electroluminescence and electro-photoluminescence as a function of temperature and applied bias.Cavity resonance and gain peak curves have been calculated at different temperatures.Good agreement between experimental and theoretical results has been obtained.

View Article: PubMed Central - HTML - PubMed

Affiliation: School of Computer Science and Electronic Engineering, University of Essex, Colchester CO4 3SQ, UK. faicha@essex.ac.uk.

ABSTRACT
Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surface emitters the operation of which is based on the longitudinal injection of electrons and holes in the active region. These devices can be designed to be used as vertical cavity surface emitting laser or, as in this study, as a vertical cavity semiconductor optical amplifier (VCSOA). This study investigates the prospects for a Hellish VCSOA based on GaInNAs/GaAs material for operation in the 1.3-μm wavelength range. Hellish VCSOAs have increased functionality, and use undoped distributed Bragg reflectors; and this coupled with direct injection into the active region is expected to yield improvements in the gain and bandwidth. The design of the Hellish VCSOA is based on the transfer matrix method and the optical field distribution within the structure, where the determination of the position of quantum wells is crucial. A full assessment of Hellish VCSOAs has been performed in a device with eleven layers of Ga0.35In0.65N0.02As0.08/GaAs quantum wells (QWs) in the active region. It was characterised through I-V, L-V and by spectral photoluminescence, electroluminescence and electro-photoluminescence as a function of temperature and applied bias. Cavity resonance and gain peak curves have been calculated at different temperatures. Good agreement between experimental and theoretical results has been obtained.

No MeSH data available.


Related in: MedlinePlus