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GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation.

Chaqmaqchee FA, Mazzucato S, Oduncuoglu M, Balkan N, Sun Y, Gunes M, Hugues M, Hopkinson M - Nanoscale Res Lett (2011)

Bottom Line: It was characterised through I-V, L-V and by spectral photoluminescence, electroluminescence and electro-photoluminescence as a function of temperature and applied bias.Cavity resonance and gain peak curves have been calculated at different temperatures.Good agreement between experimental and theoretical results has been obtained.

View Article: PubMed Central - HTML - PubMed

Affiliation: School of Computer Science and Electronic Engineering, University of Essex, Colchester CO4 3SQ, UK. faicha@essex.ac.uk.

ABSTRACT
Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surface emitters the operation of which is based on the longitudinal injection of electrons and holes in the active region. These devices can be designed to be used as vertical cavity surface emitting laser or, as in this study, as a vertical cavity semiconductor optical amplifier (VCSOA). This study investigates the prospects for a Hellish VCSOA based on GaInNAs/GaAs material for operation in the 1.3-μm wavelength range. Hellish VCSOAs have increased functionality, and use undoped distributed Bragg reflectors; and this coupled with direct injection into the active region is expected to yield improvements in the gain and bandwidth. The design of the Hellish VCSOA is based on the transfer matrix method and the optical field distribution within the structure, where the determination of the position of quantum wells is crucial. A full assessment of Hellish VCSOAs has been performed in a device with eleven layers of Ga0.35In0.65N0.02As0.08/GaAs quantum wells (QWs) in the active region. It was characterised through I-V, L-V and by spectral photoluminescence, electroluminescence and electro-photoluminescence as a function of temperature and applied bias. Cavity resonance and gain peak curves have been calculated at different temperatures. Good agreement between experimental and theoretical results has been obtained.

No MeSH data available.


Related in: MedlinePlus

Schematic diagram illustrates (a) the layer structure of the simple bar Hellish-VCSOA and (b) the refractive index profile and distribution of the electric filed intensity across the sample, in which the QWs are situated at the antinode of the electric field, i.e. where it reaches its maximum intensity.
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Figure 1: Schematic diagram illustrates (a) the layer structure of the simple bar Hellish-VCSOA and (b) the refractive index profile and distribution of the electric filed intensity across the sample, in which the QWs are situated at the antinode of the electric field, i.e. where it reaches its maximum intensity.

Mentions: The structure of the investigated device, shown in Figure 1a, contains 11 layers of 6 nm-thick Ga0.35In0.65N0.02As0.08 quantum wells separated by 10 nm GaAs barriers. The use of MQWs, placed at the electric field antinode of 3λ/2 cavity length, is done in order to provide optical gain (Figure 1b). The active region is enclosed between two 150 nm-thick doped cladding layers Si-doped (n = 1 × 1017 cm-3) on the bottom side, and C-doped (p = 1 × 1017 cm-3) on the top side. The structure is sandwiched between two DBRs. The bottom DBR has 20.5 pairs of AlAs/GaAs quarter-wave stacks and provides a reflectivity in excess of 99% at 1.3-μm. On the other side, the top DBR has six pairs of AlAs/GaAs quarter-wave stacks giving around 60% reflectivity. This is lower than the bottom DBR, thus allowing light emission from the top surface. Both DBRs are undoped except for the first bottom AlAs/GaAs period which is 1 × 1017 cm-3 doped.


GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation.

Chaqmaqchee FA, Mazzucato S, Oduncuoglu M, Balkan N, Sun Y, Gunes M, Hugues M, Hopkinson M - Nanoscale Res Lett (2011)

Schematic diagram illustrates (a) the layer structure of the simple bar Hellish-VCSOA and (b) the refractive index profile and distribution of the electric filed intensity across the sample, in which the QWs are situated at the antinode of the electric field, i.e. where it reaches its maximum intensity.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211148&req=5

Figure 1: Schematic diagram illustrates (a) the layer structure of the simple bar Hellish-VCSOA and (b) the refractive index profile and distribution of the electric filed intensity across the sample, in which the QWs are situated at the antinode of the electric field, i.e. where it reaches its maximum intensity.
Mentions: The structure of the investigated device, shown in Figure 1a, contains 11 layers of 6 nm-thick Ga0.35In0.65N0.02As0.08 quantum wells separated by 10 nm GaAs barriers. The use of MQWs, placed at the electric field antinode of 3λ/2 cavity length, is done in order to provide optical gain (Figure 1b). The active region is enclosed between two 150 nm-thick doped cladding layers Si-doped (n = 1 × 1017 cm-3) on the bottom side, and C-doped (p = 1 × 1017 cm-3) on the top side. The structure is sandwiched between two DBRs. The bottom DBR has 20.5 pairs of AlAs/GaAs quarter-wave stacks and provides a reflectivity in excess of 99% at 1.3-μm. On the other side, the top DBR has six pairs of AlAs/GaAs quarter-wave stacks giving around 60% reflectivity. This is lower than the bottom DBR, thus allowing light emission from the top surface. Both DBRs are undoped except for the first bottom AlAs/GaAs period which is 1 × 1017 cm-3 doped.

Bottom Line: It was characterised through I-V, L-V and by spectral photoluminescence, electroluminescence and electro-photoluminescence as a function of temperature and applied bias.Cavity resonance and gain peak curves have been calculated at different temperatures.Good agreement between experimental and theoretical results has been obtained.

View Article: PubMed Central - HTML - PubMed

Affiliation: School of Computer Science and Electronic Engineering, University of Essex, Colchester CO4 3SQ, UK. faicha@essex.ac.uk.

ABSTRACT
Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surface emitters the operation of which is based on the longitudinal injection of electrons and holes in the active region. These devices can be designed to be used as vertical cavity surface emitting laser or, as in this study, as a vertical cavity semiconductor optical amplifier (VCSOA). This study investigates the prospects for a Hellish VCSOA based on GaInNAs/GaAs material for operation in the 1.3-μm wavelength range. Hellish VCSOAs have increased functionality, and use undoped distributed Bragg reflectors; and this coupled with direct injection into the active region is expected to yield improvements in the gain and bandwidth. The design of the Hellish VCSOA is based on the transfer matrix method and the optical field distribution within the structure, where the determination of the position of quantum wells is crucial. A full assessment of Hellish VCSOAs has been performed in a device with eleven layers of Ga0.35In0.65N0.02As0.08/GaAs quantum wells (QWs) in the active region. It was characterised through I-V, L-V and by spectral photoluminescence, electroluminescence and electro-photoluminescence as a function of temperature and applied bias. Cavity resonance and gain peak curves have been calculated at different temperatures. Good agreement between experimental and theoretical results has been obtained.

No MeSH data available.


Related in: MedlinePlus