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Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy.

Lo ST, Chuang C, Lin SD, Chen KY, Liang CT, Lin SW, Wu JY, Yeh MR - Nanoscale Res Lett (2011)

Bottom Line: A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B.Also, phenomena of localization effects can be seen at low B.By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physics, National Taiwan University, No, 1, Sec, 4, Roosevelt Rd, Taipei 106, Taiwan. sdlin@mail.nctu.edu.tw.

ABSTRACT
Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

No MeSH data available.


Related in: MedlinePlus

Resistivity and metallic behavior. (a) Zero-field resistivity as a function of T ranging from T = 4.8 K to T = 78 K. The red solid line corresponds to a fit to Eq. (1). The best fit is limited at T > 30 K, as shown in the inset. (b), (c) ρxx (B = 0) as functions of T2 and T3, respectively. The red dashed lines are a guide to the eye.
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Figure 4: Resistivity and metallic behavior. (a) Zero-field resistivity as a function of T ranging from T = 4.8 K to T = 78 K. The red solid line corresponds to a fit to Eq. (1). The best fit is limited at T > 30 K, as shown in the inset. (b), (c) ρxx (B = 0) as functions of T2 and T3, respectively. The red dashed lines are a guide to the eye.

Mentions: As shown in Figure 4a, for 4.8 K ≦ T ≦ 78 K, the metallic behavior can be observed without a transition to the insulator, as is the case for a pure metal [11]. The mean free path for the bulk Al is approximately equal to 17.5 μm [23], substantially larger than the thickness of the thin film studied here (60 nm). It prevails that surface scattering is important instead of the grain boundary scattering in such a thin film. For a polycrystalline material, grain boundary scattering needs to be considered, while for the single crystal, it is a minor effect. In accordance with Soffer's model [24] of surface scattering and the extensive work of Sambles et al. [19,20], the resistivity takes the form


Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy.

Lo ST, Chuang C, Lin SD, Chen KY, Liang CT, Lin SW, Wu JY, Yeh MR - Nanoscale Res Lett (2011)

Resistivity and metallic behavior. (a) Zero-field resistivity as a function of T ranging from T = 4.8 K to T = 78 K. The red solid line corresponds to a fit to Eq. (1). The best fit is limited at T > 30 K, as shown in the inset. (b), (c) ρxx (B = 0) as functions of T2 and T3, respectively. The red dashed lines are a guide to the eye.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211146&req=5

Figure 4: Resistivity and metallic behavior. (a) Zero-field resistivity as a function of T ranging from T = 4.8 K to T = 78 K. The red solid line corresponds to a fit to Eq. (1). The best fit is limited at T > 30 K, as shown in the inset. (b), (c) ρxx (B = 0) as functions of T2 and T3, respectively. The red dashed lines are a guide to the eye.
Mentions: As shown in Figure 4a, for 4.8 K ≦ T ≦ 78 K, the metallic behavior can be observed without a transition to the insulator, as is the case for a pure metal [11]. The mean free path for the bulk Al is approximately equal to 17.5 μm [23], substantially larger than the thickness of the thin film studied here (60 nm). It prevails that surface scattering is important instead of the grain boundary scattering in such a thin film. For a polycrystalline material, grain boundary scattering needs to be considered, while for the single crystal, it is a minor effect. In accordance with Soffer's model [24] of surface scattering and the extensive work of Sambles et al. [19,20], the resistivity takes the form

Bottom Line: A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B.Also, phenomena of localization effects can be seen at low B.By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physics, National Taiwan University, No, 1, Sec, 4, Roosevelt Rd, Taipei 106, Taiwan. sdlin@mail.nctu.edu.tw.

ABSTRACT
Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

No MeSH data available.


Related in: MedlinePlus