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Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy.

Lo ST, Chuang C, Lin SD, Chen KY, Liang CT, Lin SW, Wu JY, Yeh MR - Nanoscale Res Lett (2011)

Bottom Line: A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B.Also, phenomena of localization effects can be seen at low B.By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physics, National Taiwan University, No, 1, Sec, 4, Roosevelt Rd, Taipei 106, Taiwan. sdlin@mail.nctu.edu.tw.

ABSTRACT
Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

No MeSH data available.


Related in: MedlinePlus

Deviations from the B2 dependence in the low-field regime at various T. ρxx as function of B2 (a) and B (b). The dotted lines in blue represent linear parts of the data.
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Figure 3: Deviations from the B2 dependence in the low-field regime at various T. ρxx as function of B2 (a) and B (b). The dotted lines in blue represent linear parts of the data.

Mentions: While deviations from the B2 dependence in the low-field regime at various T can be observed in Figure 3a, it is beyond the classical mechanism. Thus, we know that quantum interference-induced corrections are needed to be taken into account for the exact illustration of our results. The contribution of weak localization [6,10] is usually dominant for T ≧ 20 K. At high B, ρxx shows a trend toward a linear dependence on B, shown in Figure 3b, representing that the hole-like transport becomes dominant indeed. It is worth mentioning that the PMR can still be observed at T ≧ 20 K, without turning into the NMR [6]. Most of the measurements on Al [6-10] show that the PMR is almost diminished at T > 10 K due to its weak spin-orbit scattering. As suggested by Bergmann et al. [7], PMR almost diminishes at T ≧ 9.4 K for Al in the low-field regime. In order to study the scattering mechanisms in different T ranges, we analyzed the zero-field ρxx as a function of T in the next section.


Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy.

Lo ST, Chuang C, Lin SD, Chen KY, Liang CT, Lin SW, Wu JY, Yeh MR - Nanoscale Res Lett (2011)

Deviations from the B2 dependence in the low-field regime at various T. ρxx as function of B2 (a) and B (b). The dotted lines in blue represent linear parts of the data.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211146&req=5

Figure 3: Deviations from the B2 dependence in the low-field regime at various T. ρxx as function of B2 (a) and B (b). The dotted lines in blue represent linear parts of the data.
Mentions: While deviations from the B2 dependence in the low-field regime at various T can be observed in Figure 3a, it is beyond the classical mechanism. Thus, we know that quantum interference-induced corrections are needed to be taken into account for the exact illustration of our results. The contribution of weak localization [6,10] is usually dominant for T ≧ 20 K. At high B, ρxx shows a trend toward a linear dependence on B, shown in Figure 3b, representing that the hole-like transport becomes dominant indeed. It is worth mentioning that the PMR can still be observed at T ≧ 20 K, without turning into the NMR [6]. Most of the measurements on Al [6-10] show that the PMR is almost diminished at T > 10 K due to its weak spin-orbit scattering. As suggested by Bergmann et al. [7], PMR almost diminishes at T ≧ 9.4 K for Al in the low-field regime. In order to study the scattering mechanisms in different T ranges, we analyzed the zero-field ρxx as a function of T in the next section.

Bottom Line: A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B.Also, phenomena of localization effects can be seen at low B.By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physics, National Taiwan University, No, 1, Sec, 4, Roosevelt Rd, Taipei 106, Taiwan. sdlin@mail.nctu.edu.tw.

ABSTRACT
Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

No MeSH data available.


Related in: MedlinePlus