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Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy.

Lo ST, Chuang C, Lin SD, Chen KY, Liang CT, Lin SW, Wu JY, Yeh MR - Nanoscale Res Lett (2011)

Bottom Line: A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B.Also, phenomena of localization effects can be seen at low B.By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physics, National Taiwan University, No, 1, Sec, 4, Roosevelt Rd, Taipei 106, Taiwan. sdlin@mail.nctu.edu.tw.

ABSTRACT
Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

No MeSH data available.


Related in: MedlinePlus

Resistivity at various temperatures T. (a) Longitudinal resistivity, ρxx. (b) Hall resistivity, ρxy, as a function of magnetic field B at various temperatures T.
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Figure 2: Resistivity at various temperatures T. (a) Longitudinal resistivity, ρxx. (b) Hall resistivity, ρxy, as a function of magnetic field B at various temperatures T.

Mentions: Longitudinal resistivity and Hall resistivity (ρxx and ρxy) as a function of magnetic field B at various temperatures T are shown in Figure 2a,b, respectively. PMR [7,9] can be observed at all T. It is generally believed that PMR is proportional to the quadratic B in the low-field region followed by a linear dependence on B with increasing B for non-compensated (the numbers of electrons and holes are different) metals [14,26], such as aluminum investigated here. A classical PMR based on the two-band model [14,15,29] results in this B2 dependence in the low-field regime where the Fermi surface is spherical. With increasing B, the number of electrons undergoing Bragg reflection at the cusps in the second Brillouin zone increases, leading to the linear dependence on B for ρxx [26,27]. Another phenomenon regarding the crossover from electron- to hole-dominant transport is the reverse of the sign of the Hall resistivity [28] with increasing B, as presented in Figure 2b. Such a bipolar phenomenon with increasing B can also be understood by the Bragg reflection occurring at the cusps, leading to the hole-like orbit.


Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy.

Lo ST, Chuang C, Lin SD, Chen KY, Liang CT, Lin SW, Wu JY, Yeh MR - Nanoscale Res Lett (2011)

Resistivity at various temperatures T. (a) Longitudinal resistivity, ρxx. (b) Hall resistivity, ρxy, as a function of magnetic field B at various temperatures T.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211146&req=5

Figure 2: Resistivity at various temperatures T. (a) Longitudinal resistivity, ρxx. (b) Hall resistivity, ρxy, as a function of magnetic field B at various temperatures T.
Mentions: Longitudinal resistivity and Hall resistivity (ρxx and ρxy) as a function of magnetic field B at various temperatures T are shown in Figure 2a,b, respectively. PMR [7,9] can be observed at all T. It is generally believed that PMR is proportional to the quadratic B in the low-field region followed by a linear dependence on B with increasing B for non-compensated (the numbers of electrons and holes are different) metals [14,26], such as aluminum investigated here. A classical PMR based on the two-band model [14,15,29] results in this B2 dependence in the low-field regime where the Fermi surface is spherical. With increasing B, the number of electrons undergoing Bragg reflection at the cusps in the second Brillouin zone increases, leading to the linear dependence on B for ρxx [26,27]. Another phenomenon regarding the crossover from electron- to hole-dominant transport is the reverse of the sign of the Hall resistivity [28] with increasing B, as presented in Figure 2b. Such a bipolar phenomenon with increasing B can also be understood by the Bragg reflection occurring at the cusps, leading to the hole-like orbit.

Bottom Line: A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B.Also, phenomena of localization effects can be seen at low B.By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physics, National Taiwan University, No, 1, Sec, 4, Roosevelt Rd, Taipei 106, Taiwan. sdlin@mail.nctu.edu.tw.

ABSTRACT
Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

No MeSH data available.


Related in: MedlinePlus