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Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy.

Lo ST, Chuang C, Lin SD, Chen KY, Liang CT, Lin SW, Wu JY, Yeh MR - Nanoscale Res Lett (2011)

Bottom Line: A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B.Also, phenomena of localization effects can be seen at low B.By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physics, National Taiwan University, No, 1, Sec, 4, Roosevelt Rd, Taipei 106, Taiwan. sdlin@mail.nctu.edu.tw.

ABSTRACT
Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

No MeSH data available.


Related in: MedlinePlus

X-ray and AFM of the Al thin film. (a) The φ scanning of Al(111) peak of the sample. (b) An AFM 5 × 5-μm2 image of a 60-nm-thick Al thin film.
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Figure 1: X-ray and AFM of the Al thin film. (a) The φ scanning of Al(111) peak of the sample. (b) An AFM 5 × 5-μm2 image of a 60-nm-thick Al thin film.

Mentions: The sample used in this study was grown by molecular beam epitaxy [MBE]. The following layer sequence is grown on a semi-insulating GaAs (100) substrate: 200-nm undoped GaAs and 60-nm Al film. All the processes were performed in the ultra-high-vacuum MBE chamber to prevent unnecessary defects. The Al thin film investigated here is a single crystalline, which can be checked by the X-ray shown in Figure 1a. Figure 1b shows an atomic force microscopy [AFM] image of the Al thin film. Four-terminal magnetotransport measurements were performed in a top-loading He3 system equipped with a superconducting magnet over the temperature range from T = 4 K to T = 78 K using standard ac phase-sensitive lock-in techniques. The magnetic field is applied perpendicular to the plane of the Al thin film. It is necessary to mention that all the resistivity results have been divided by the thickness (60 nm).


Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy.

Lo ST, Chuang C, Lin SD, Chen KY, Liang CT, Lin SW, Wu JY, Yeh MR - Nanoscale Res Lett (2011)

X-ray and AFM of the Al thin film. (a) The φ scanning of Al(111) peak of the sample. (b) An AFM 5 × 5-μm2 image of a 60-nm-thick Al thin film.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211146&req=5

Figure 1: X-ray and AFM of the Al thin film. (a) The φ scanning of Al(111) peak of the sample. (b) An AFM 5 × 5-μm2 image of a 60-nm-thick Al thin film.
Mentions: The sample used in this study was grown by molecular beam epitaxy [MBE]. The following layer sequence is grown on a semi-insulating GaAs (100) substrate: 200-nm undoped GaAs and 60-nm Al film. All the processes were performed in the ultra-high-vacuum MBE chamber to prevent unnecessary defects. The Al thin film investigated here is a single crystalline, which can be checked by the X-ray shown in Figure 1a. Figure 1b shows an atomic force microscopy [AFM] image of the Al thin film. Four-terminal magnetotransport measurements were performed in a top-loading He3 system equipped with a superconducting magnet over the temperature range from T = 4 K to T = 78 K using standard ac phase-sensitive lock-in techniques. The magnetic field is applied perpendicular to the plane of the Al thin film. It is necessary to mention that all the resistivity results have been divided by the thickness (60 nm).

Bottom Line: A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B.Also, phenomena of localization effects can be seen at low B.By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physics, National Taiwan University, No, 1, Sec, 4, Roosevelt Rd, Taipei 106, Taiwan. sdlin@mail.nctu.edu.tw.

ABSTRACT
Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

No MeSH data available.


Related in: MedlinePlus