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Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001).

Bergamaschini R, Montalenti F, Miglio L - Nanoscale Res Lett (2010)

Bottom Line: The method allows us to explore long time-scale evolution while using large simulation cells.We analyze the possibility to achieve selective nucleation and island homogeneity as a function of the various parameters (flux, temperature, pit period) able to influence the growth process.The presence of an optimal condition where the atomic diffusivity is sufficient to guarantee nucleation only within pits, but not so large to induce significant Ostwald ripening, is clearly demonstrated.

View Article: PubMed Central - HTML - PubMed

Affiliation: L-NESS and Materials Science Department, University of Milano-Bicocca, Via R. Cozzi 53, 20125 Milano, Italy.

ABSTRACT
We investigate ordered nucleation of Ge islands on pit-patterned Si(001) using an original hybrid Kinetic Monte Carlo model. The method allows us to explore long time-scale evolution while using large simulation cells. We analyze the possibility to achieve selective nucleation and island homogeneity as a function of the various parameters (flux, temperature, pit period) able to influence the growth process. The presence of an optimal condition where the atomic diffusivity is sufficient to guarantee nucleation only within pits, but not so large to induce significant Ostwald ripening, is clearly demonstrated.

No MeSH data available.


Related in: MedlinePlus

Schematic representation of the potential energy profile for adatom diffusion and detachment from islands on flat regions (a) and inside pits (b)
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Figure 1: Schematic representation of the potential energy profile for adatom diffusion and detachment from islands on flat regions (a) and inside pits (b)

Mentions: Adatoms are described as in the standard KMC: they diffuse between nearest neighboring sites through thermally activated hops, as shown in Fig. 1. The hop-diffusion rate for an isolated adatom is determined by the Arrhenius relation


Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001).

Bergamaschini R, Montalenti F, Miglio L - Nanoscale Res Lett (2010)

Schematic representation of the potential energy profile for adatom diffusion and detachment from islands on flat regions (a) and inside pits (b)
© Copyright Policy
Related In: Results  -  Collection

Show All Figures
getmorefigures.php?uid=PMC2991238&req=5

Figure 1: Schematic representation of the potential energy profile for adatom diffusion and detachment from islands on flat regions (a) and inside pits (b)
Mentions: Adatoms are described as in the standard KMC: they diffuse between nearest neighboring sites through thermally activated hops, as shown in Fig. 1. The hop-diffusion rate for an isolated adatom is determined by the Arrhenius relation

Bottom Line: The method allows us to explore long time-scale evolution while using large simulation cells.We analyze the possibility to achieve selective nucleation and island homogeneity as a function of the various parameters (flux, temperature, pit period) able to influence the growth process.The presence of an optimal condition where the atomic diffusivity is sufficient to guarantee nucleation only within pits, but not so large to induce significant Ostwald ripening, is clearly demonstrated.

View Article: PubMed Central - HTML - PubMed

Affiliation: L-NESS and Materials Science Department, University of Milano-Bicocca, Via R. Cozzi 53, 20125 Milano, Italy.

ABSTRACT
We investigate ordered nucleation of Ge islands on pit-patterned Si(001) using an original hybrid Kinetic Monte Carlo model. The method allows us to explore long time-scale evolution while using large simulation cells. We analyze the possibility to achieve selective nucleation and island homogeneity as a function of the various parameters (flux, temperature, pit period) able to influence the growth process. The presence of an optimal condition where the atomic diffusivity is sufficient to guarantee nucleation only within pits, but not so large to induce significant Ostwald ripening, is clearly demonstrated.

No MeSH data available.


Related in: MedlinePlus