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Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation.

Konishi T, Tsukamoto S - Nanoscale Res Lett (2010)

Bottom Line: Surface of an InAs wetting layer on GaAs(001) preceding InAs quantum dot (QD) formation was observed at 300°C with in situ scanning tunneling microscopy (STM).The distribution of the domains was statistically investigated in terms of spatial point patterns.It was found that the domains were distributed in an ordered pattern rather than a random pattern.

View Article: PubMed Central - HTML - PubMed

Affiliation: Anan National College of Technology, Anan, Tokushima 774-0017 Japan.

ABSTRACT
Surface of an InAs wetting layer on GaAs(001) preceding InAs quantum dot (QD) formation was observed at 300°C with in situ scanning tunneling microscopy (STM). Domains of (1 × 3)/(2 × 3) and (2 × 4) surface reconstructions were located in the STM image. The density of each surface reconstruction domain was comparable to that of subsequently nucleated QD precursors. The distribution of the domains was statistically investigated in terms of spatial point patterns. It was found that the domains were distributed in an ordered pattern rather than a random pattern. It implied the possibility that QD nucleation sites are related to the surface reconstruction domains.

No MeSH data available.


Nearest neighbor distance function p(t) of surface reconstruction domains on InAs WL as well as that of typical ordered point pattern. Envelope region of typical Poisson patterns by accumulating 50 simulations is also shown
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Figure 5: Nearest neighbor distance function p(t) of surface reconstruction domains on InAs WL as well as that of typical ordered point pattern. Envelope region of typical Poisson patterns by accumulating 50 simulations is also shown

Mentions: The nearest neighbor distance function p(t) of the surface reconstruction domains will give more precise information. Figure 5 shows the traces of p(t), which were calculated for the surface reconstruction domains as well as a typical regular point pattern. The p(t) envelope region of typical Poisson patterns was calculated by accumulating 50 simulations of scattering 50 random points. Traces of the surface reconstruction domains were plotted between that of the ordered pattern and the Poisson envelope region. This shows that the surface reconstruction domains were distributed in an ordered pattern rather than a random pattern. If we compare p(t) traces between surface reconstruction domains and QD precursors just after nucleation, the relationship between them and QD growth mechanism will be known more precisely.


Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation.

Konishi T, Tsukamoto S - Nanoscale Res Lett (2010)

Nearest neighbor distance function p(t) of surface reconstruction domains on InAs WL as well as that of typical ordered point pattern. Envelope region of typical Poisson patterns by accumulating 50 simulations is also shown
© Copyright Policy
Related In: Results  -  Collection

Show All Figures
getmorefigures.php?uid=PMC2991234&req=5

Figure 5: Nearest neighbor distance function p(t) of surface reconstruction domains on InAs WL as well as that of typical ordered point pattern. Envelope region of typical Poisson patterns by accumulating 50 simulations is also shown
Mentions: The nearest neighbor distance function p(t) of the surface reconstruction domains will give more precise information. Figure 5 shows the traces of p(t), which were calculated for the surface reconstruction domains as well as a typical regular point pattern. The p(t) envelope region of typical Poisson patterns was calculated by accumulating 50 simulations of scattering 50 random points. Traces of the surface reconstruction domains were plotted between that of the ordered pattern and the Poisson envelope region. This shows that the surface reconstruction domains were distributed in an ordered pattern rather than a random pattern. If we compare p(t) traces between surface reconstruction domains and QD precursors just after nucleation, the relationship between them and QD growth mechanism will be known more precisely.

Bottom Line: Surface of an InAs wetting layer on GaAs(001) preceding InAs quantum dot (QD) formation was observed at 300°C with in situ scanning tunneling microscopy (STM).The distribution of the domains was statistically investigated in terms of spatial point patterns.It was found that the domains were distributed in an ordered pattern rather than a random pattern.

View Article: PubMed Central - HTML - PubMed

Affiliation: Anan National College of Technology, Anan, Tokushima 774-0017 Japan.

ABSTRACT
Surface of an InAs wetting layer on GaAs(001) preceding InAs quantum dot (QD) formation was observed at 300°C with in situ scanning tunneling microscopy (STM). Domains of (1 × 3)/(2 × 3) and (2 × 4) surface reconstructions were located in the STM image. The density of each surface reconstruction domain was comparable to that of subsequently nucleated QD precursors. The distribution of the domains was statistically investigated in terms of spatial point patterns. It was found that the domains were distributed in an ordered pattern rather than a random pattern. It implied the possibility that QD nucleation sites are related to the surface reconstruction domains.

No MeSH data available.