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Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates.

Shafi M, Mari RH, Khatab A, Taylor D, Henini M - Nanoscale Res Lett (2010)

Bottom Line: One dominant electron-emitting level is observed in the quantum wells structure grown on (100) plane whose activation energy varies from 0.47 to 1.3 eV as junction electric field varies from zero field (edge of the depletion region) to 4.7 × 10(6) V/m.Two defect states with activation energies of 0.24 and 0.80 eV are detected in the structures grown on (311)B plane.The value of the capture barrier energy of the trap at E(c)-0.24 eV is 0.39 eV.

View Article: PubMed Central - HTML - PubMed

Affiliation: School of Physics and Astronomy, Nottingham Nanotechnology & Nanoscience Centre, University of Nottingham, Nottingham, NG7 2RD UK.

ABSTRACT
Si-doped GaAs/AlGaAs multi-quantum wells structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates have been studied by using conventional deep-level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques. One dominant electron-emitting level is observed in the quantum wells structure grown on (100) plane whose activation energy varies from 0.47 to 1.3 eV as junction electric field varies from zero field (edge of the depletion region) to 4.7 × 10(6) V/m. Two defect states with activation energies of 0.24 and 0.80 eV are detected in the structures grown on (311)B plane. The E(c)-0.24 eV trap shows that its capture cross-section is strongly temperature dependent, whilst the other two traps show no such dependence. The value of the capture barrier energy of the trap at E(c)-0.24 eV is 0.39 eV.

No MeSH data available.


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Emission rate signatures of each defect state; a Illustration of the bias dependence of the emission rates of E1; b Arrhenius plots obtained from the thermal emission rates at different junction fields; c Activation energy of trap E1 as a function of applied electric field
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Figure 2: Emission rate signatures of each defect state; a Illustration of the bias dependence of the emission rates of E1; b Arrhenius plots obtained from the thermal emission rates at different junction fields; c Activation energy of trap E1 as a function of applied electric field

Mentions: The dependence of the emission rate signatures of trap E1 on the junction electric field is depicted in Fig. 2a as function of reverse bias. Electric field–dependent carrier emission measurements were taken using the double pulse method [8]. The activation energy of trap E1 determined from the slope of the Arrhenius plots (Fig. 2b) using Eq. 1 at different junction electric field strengths is illustrated in Fig. 2c. From the extrapolation of energy to the zero field value (edge of the depletion region) in the energy-field graph (Fig. 2c), the activation energy value varies from 0.47 to 1.3 eV as the electric field is varied from zero to 4.7 × 106 V/m.


Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates.

Shafi M, Mari RH, Khatab A, Taylor D, Henini M - Nanoscale Res Lett (2010)

Emission rate signatures of each defect state; a Illustration of the bias dependence of the emission rates of E1; b Arrhenius plots obtained from the thermal emission rates at different junction fields; c Activation energy of trap E1 as a function of applied electric field
© Copyright Policy
Related In: Results  -  Collection

Show All Figures
getmorefigures.php?uid=PMC2991218&req=5

Figure 2: Emission rate signatures of each defect state; a Illustration of the bias dependence of the emission rates of E1; b Arrhenius plots obtained from the thermal emission rates at different junction fields; c Activation energy of trap E1 as a function of applied electric field
Mentions: The dependence of the emission rate signatures of trap E1 on the junction electric field is depicted in Fig. 2a as function of reverse bias. Electric field–dependent carrier emission measurements were taken using the double pulse method [8]. The activation energy of trap E1 determined from the slope of the Arrhenius plots (Fig. 2b) using Eq. 1 at different junction electric field strengths is illustrated in Fig. 2c. From the extrapolation of energy to the zero field value (edge of the depletion region) in the energy-field graph (Fig. 2c), the activation energy value varies from 0.47 to 1.3 eV as the electric field is varied from zero to 4.7 × 106 V/m.

Bottom Line: One dominant electron-emitting level is observed in the quantum wells structure grown on (100) plane whose activation energy varies from 0.47 to 1.3 eV as junction electric field varies from zero field (edge of the depletion region) to 4.7 × 10(6) V/m.Two defect states with activation energies of 0.24 and 0.80 eV are detected in the structures grown on (311)B plane.The value of the capture barrier energy of the trap at E(c)-0.24 eV is 0.39 eV.

View Article: PubMed Central - HTML - PubMed

Affiliation: School of Physics and Astronomy, Nottingham Nanotechnology & Nanoscience Centre, University of Nottingham, Nottingham, NG7 2RD UK.

ABSTRACT
Si-doped GaAs/AlGaAs multi-quantum wells structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates have been studied by using conventional deep-level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques. One dominant electron-emitting level is observed in the quantum wells structure grown on (100) plane whose activation energy varies from 0.47 to 1.3 eV as junction electric field varies from zero field (edge of the depletion region) to 4.7 × 10(6) V/m. Two defect states with activation energies of 0.24 and 0.80 eV are detected in the structures grown on (311)B plane. The E(c)-0.24 eV trap shows that its capture cross-section is strongly temperature dependent, whilst the other two traps show no such dependence. The value of the capture barrier energy of the trap at E(c)-0.24 eV is 0.39 eV.

No MeSH data available.


Related in: MedlinePlus