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Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111).

Abe S, Handa H, Takahashi R, Imaizumi K, Fukidome H, Suemitsu M - Nanoscale Res Lett (2010)

Bottom Line: Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied.The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D(2)-TPD) and complementarily by ex situ Raman and C1s core-level spectroscopies.The surface of the 3C-SiC(111)/Si(111) is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3)R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001) proceeds.

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ABSTRACT
Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D(2)-TPD) and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111)/Si(111) is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3)R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001) proceeds.

No MeSH data available.


Raman spectra of SiC thin film on Si, after annealing at (i) 1,273 K (sample B), (ii) 1,423 K (sample C), (iii) 1,523 K (sample D), respectively
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Figure 2: Raman spectra of SiC thin film on Si, after annealing at (i) 1,273 K (sample B), (ii) 1,423 K (sample C), (iii) 1,523 K (sample D), respectively

Mentions: Figure 1 compares the D2-TPD spectra for Si (Sample A), (√3 × √3)R30°-reconstructed 3C-SiC(111)/Si(111) (Sample B), (6√3 × 6√3)R30°-reconstructed 3C-SiC(111)/Si(111) (Sample C), and (1 × 1) graphene/3C-SiC(111)/Si(111) (Sample D) surfaces [7]. The spectrum for Si(111) (Sample A) has two peaks at ~660 and ~780 K, which are ascribable to the deuterium desorption from D2-Si and D-Si, respectively [9]. The dominance of the latter peak indicates that the surface of the Si(111) substrate is largely terminated with monodeuteride. In the spectrum of the (√3 × √3)R30°-reconstructed 3C-SiC(111)/Si(111) surface (Sample B), a new predominant peak appears at ~960 K. This peak is attributable to the deuterium desorption from D-Si backbonded with carbon atoms (D-Si(C)) [10]. Concomitant with the appearance of the predominant peak of D-Si backbonded with carbon atoms, the peaks of D2-Si (660 K) and D-Si (780 K) backbonded with silicon atoms decrease. The absence of peaks in the region ranging from 1,100 to 1,300 K indicates that no carbon atoms are present in the topmost layer. This is in good agreement with the Raman spectrum in Fig. 2(i), showing no graphene-related peaks. The surface of the (√3 × √3)R30°-reconstructed 3C-SiC(111)/Si(111) is thus proven to be Si-terminated.


Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111).

Abe S, Handa H, Takahashi R, Imaizumi K, Fukidome H, Suemitsu M - Nanoscale Res Lett (2010)

Raman spectra of SiC thin film on Si, after annealing at (i) 1,273 K (sample B), (ii) 1,423 K (sample C), (iii) 1,523 K (sample D), respectively
© Copyright Policy
Related In: Results  -  Collection

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Figure 2: Raman spectra of SiC thin film on Si, after annealing at (i) 1,273 K (sample B), (ii) 1,423 K (sample C), (iii) 1,523 K (sample D), respectively
Mentions: Figure 1 compares the D2-TPD spectra for Si (Sample A), (√3 × √3)R30°-reconstructed 3C-SiC(111)/Si(111) (Sample B), (6√3 × 6√3)R30°-reconstructed 3C-SiC(111)/Si(111) (Sample C), and (1 × 1) graphene/3C-SiC(111)/Si(111) (Sample D) surfaces [7]. The spectrum for Si(111) (Sample A) has two peaks at ~660 and ~780 K, which are ascribable to the deuterium desorption from D2-Si and D-Si, respectively [9]. The dominance of the latter peak indicates that the surface of the Si(111) substrate is largely terminated with monodeuteride. In the spectrum of the (√3 × √3)R30°-reconstructed 3C-SiC(111)/Si(111) surface (Sample B), a new predominant peak appears at ~960 K. This peak is attributable to the deuterium desorption from D-Si backbonded with carbon atoms (D-Si(C)) [10]. Concomitant with the appearance of the predominant peak of D-Si backbonded with carbon atoms, the peaks of D2-Si (660 K) and D-Si (780 K) backbonded with silicon atoms decrease. The absence of peaks in the region ranging from 1,100 to 1,300 K indicates that no carbon atoms are present in the topmost layer. This is in good agreement with the Raman spectrum in Fig. 2(i), showing no graphene-related peaks. The surface of the (√3 × √3)R30°-reconstructed 3C-SiC(111)/Si(111) is thus proven to be Si-terminated.

Bottom Line: Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied.The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D(2)-TPD) and complementarily by ex situ Raman and C1s core-level spectroscopies.The surface of the 3C-SiC(111)/Si(111) is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3)R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001) proceeds.

View Article: PubMed Central - HTML - PubMed

ABSTRACT
Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D(2)-TPD) and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111)/Si(111) is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3)R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001) proceeds.

No MeSH data available.