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Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal.

Urbańczyk A, Hamhuis GJ, Nötzel R - Nanoscale Res Lett (2010)

Bottom Line: We report the observation of coupling of single InGaAs quantum dots with the surface plasmon resonance of a metal nanocrystal, which leads to clear enhancement of the photoluminescence in the spectral region of the surface plasmon resonance of the metal structures.Sharp emission lines, typical for single quantum dot emission, are observed, whereas for reference samples, only weak continuous background emission is visible.The composite metal-semiconductor structure is prepared by molecular beam epitaxy utilizing the principle of strain-driven adatom migration for the positioning of the metal nanocrystals with respect to the quantum dots without use of any additional processing steps.

View Article: PubMed Central - HTML - PubMed

Affiliation: COBRA Research Institute on Communication Technology, Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.

ABSTRACT
We report the observation of coupling of single InGaAs quantum dots with the surface plasmon resonance of a metal nanocrystal, which leads to clear enhancement of the photoluminescence in the spectral region of the surface plasmon resonance of the metal structures. Sharp emission lines, typical for single quantum dot emission, are observed, whereas for reference samples, only weak continuous background emission is visible. The composite metal-semiconductor structure is prepared by molecular beam epitaxy utilizing the principle of strain-driven adatom migration for the positioning of the metal nanocrystals with respect to the quantum dots without use of any additional processing steps.

No MeSH data available.


Schematic structure of the investigated sample (a). 2 μm by 2 μm AFM image of the investigated sample (b) and a magnified image of an individual In nanocrystal (c)
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Figure 1: Schematic structure of the investigated sample (a). 2 μm by 2 μm AFM image of the investigated sample (b) and a magnified image of an individual In nanocrystal (c)

Mentions: The investigated structure is depicted in Fig. 1a. Due to multiple stacking and annealing, one-dimensional InGaAs QD arrays form due to the anisotropic properties of the GaAs (100) surface and strain-driven adatom migration [11]. Deposition of In nanocrystals results also in their ordering on top of the QD arrays. It has been shown that the mechanism of In nanocrystal ordering is also strain-related [13]. This is justified by the fact that the ordering is preserved even after deposition of a thin GaAs capping layer, which radically smoothes the surface. Morphology-related ordering would be lost after capping, which is not the case as seen in Fig. 1b.


Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal.

Urbańczyk A, Hamhuis GJ, Nötzel R - Nanoscale Res Lett (2010)

Schematic structure of the investigated sample (a). 2 μm by 2 μm AFM image of the investigated sample (b) and a magnified image of an individual In nanocrystal (c)
© Copyright Policy
Related In: Results  -  Collection

Show All Figures
getmorefigures.php?uid=PMC2991211&req=5

Figure 1: Schematic structure of the investigated sample (a). 2 μm by 2 μm AFM image of the investigated sample (b) and a magnified image of an individual In nanocrystal (c)
Mentions: The investigated structure is depicted in Fig. 1a. Due to multiple stacking and annealing, one-dimensional InGaAs QD arrays form due to the anisotropic properties of the GaAs (100) surface and strain-driven adatom migration [11]. Deposition of In nanocrystals results also in their ordering on top of the QD arrays. It has been shown that the mechanism of In nanocrystal ordering is also strain-related [13]. This is justified by the fact that the ordering is preserved even after deposition of a thin GaAs capping layer, which radically smoothes the surface. Morphology-related ordering would be lost after capping, which is not the case as seen in Fig. 1b.

Bottom Line: We report the observation of coupling of single InGaAs quantum dots with the surface plasmon resonance of a metal nanocrystal, which leads to clear enhancement of the photoluminescence in the spectral region of the surface plasmon resonance of the metal structures.Sharp emission lines, typical for single quantum dot emission, are observed, whereas for reference samples, only weak continuous background emission is visible.The composite metal-semiconductor structure is prepared by molecular beam epitaxy utilizing the principle of strain-driven adatom migration for the positioning of the metal nanocrystals with respect to the quantum dots without use of any additional processing steps.

View Article: PubMed Central - HTML - PubMed

Affiliation: COBRA Research Institute on Communication Technology, Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.

ABSTRACT
We report the observation of coupling of single InGaAs quantum dots with the surface plasmon resonance of a metal nanocrystal, which leads to clear enhancement of the photoluminescence in the spectral region of the surface plasmon resonance of the metal structures. Sharp emission lines, typical for single quantum dot emission, are observed, whereas for reference samples, only weak continuous background emission is visible. The composite metal-semiconductor structure is prepared by molecular beam epitaxy utilizing the principle of strain-driven adatom migration for the positioning of the metal nanocrystals with respect to the quantum dots without use of any additional processing steps.

No MeSH data available.